Abstract: An ultra-high precision stage incorporating a novel, legged design suitable for applications requiring high voltage and vacuum is disclosed herein. The stage comprises: a base; a frame attached to the base; a platform with a bottom platform surface; at least three adjustable limbs coupled to the base and the bottom platform surface, each limb comprising a raising member attached to the base, a first attachment member attached to the raising member, a leg, a bottom end of the leg attached to the first attachment member, a second attachment member attached to a top end of the leg and the second attachment member attached to the bottom platform surface; and platform movement members coupled to the platform and the frame, providing precise positioning and movement of the platform. The attachment members can be flexure joints; further, they can be flexural thrust joints. The platform can have six degrees of freedom of movement and accommodate wafers with diameters of 300 mm. The stage can weigh less than 100 lbs.
Abstract: A proximity effect correction method for electron beam lithography suitable for use in a raster scan system. The exposure pattern consists of shapes; these shapes are subdivided into edge pixels and interior pixels; the pattern is then modified by uniformly removing a fraction of the interior pixels. The method reduces the backscattered electron background dose, improving the contrast for shapes with fine features, particularly when they are in close proximity to large or densely packed shapes.
Type:
Grant
Filed:
March 16, 2000
Date of Patent:
November 13, 2001
Inventors:
N. William Parker, Daniel L. Cavan, Alan D. Brodie, John H. McCoy