Patents Represented by Attorney, Agent or Law Firm John P. Hohimer
  • Patent number: 7992309
    Abstract: A cutting blade is disclosed fabricated of micromachined silicon. The cutting blade utilizes a monocrystalline silicon substrate having a {211} crystalline orientation to form one or more cutting edges that are defined by the intersection of {211} crystalline planes of silicon with {111} crystalline planes of silicon. This results in a cutting blade which has a shallow cutting-edge angle ? of 19.5°. The micromachined cutting blade can be formed using an anisotropic wet etching process which substantially terminates etching upon reaching the {111} crystalline planes of silicon. This allows multiple blades to be batch fabricated on a common substrate and separated for packaging and use. The micromachined cutting blade, which can be mounted to a handle in tension and optionally coated for increased wear resistance and biocompatibility, has multiple applications including eye surgery (LASIK procedure).
    Type: Grant
    Filed: April 21, 2003
    Date of Patent: August 9, 2011
    Assignee: Sandia Corporation
    Inventors: James G. Fleming, Carol Fleming, legal representative, Jeffry J. Sniegowski, Stephen Montague
  • Patent number: 7995877
    Abstract: An optical NAND gate is formed from two pair of optical waveguide devices on a substrate, with each pair of the optical waveguide devices consisting of an electroabsorption modulator and a photodetector. One pair of the optical waveguide devices is electrically connected in parallel to operate as an optical AND gate; and the other pair of the optical waveguide devices is connected in series to operate as an optical NOT gate (i.e. an optical inverter). The optical NAND gate utilizes two digital optical inputs and a continuous light input to provide a NAND function output. The optical NAND gate can be formed from III-V compound semiconductor layers which are epitaxially deposited on a III-V compound semiconductor substrate, and operates at a wavelength in the range of 0.8-2.0 ?m.
    Type: Grant
    Filed: July 30, 2008
    Date of Patent: August 9, 2011
    Assignee: Sandia Corporation
    Inventors: Erik J. Skogen, James Raring, Anna Tauke-Pedretti
  • Patent number: 7859350
    Abstract: A microfabricated ion frequency standard (i.e. an ion clock) is disclosed with a permanently-sealed vacuum package containing a source of ytterbium (Yb) ions and an octupole ion trap. The source of Yb ions is a micro-hotplate which generates Yb atoms which are then ionized by a ultraviolet light-emitting diode or a field-emission electron source. The octupole ion trap, which confines the Yb ions, is formed from suspended electrodes on a number of stacked-up substrates. A microwave source excites a ground-state transition frequency of the Yb ions, with a frequency-doubled vertical-external-cavity laser (VECSEL) then exciting the Yb ions up to an excited state to produce fluorescent light which is used to tune the microwave source to the ground-state transition frequency, with the microwave source providing a precise frequency output for the ion clock.
    Type: Grant
    Filed: April 28, 2009
    Date of Patent: December 28, 2010
    Assignee: Sandia Corporation
    Inventors: Peter Schwindt, Grant Biedermann, Matthew G. Blain, Daniel L. Stick, Darwin K. Serkland, Roy H. Olsson, III
  • Patent number: 7825735
    Abstract: A transimpedance amplifier system is disclosed which simultaneously generates a low-gain output signal and a high-gain output signal from an input current signal using a single transimpedance amplifier having two different feedback loops with different amplification factors to generate two different output voltage signals. One of the feedback loops includes a resistor, and the other feedback loop includes another resistor in series with one or more diodes. The transimpedance amplifier system includes a signal linearizer to linearize one or both of the low- and high-gain output signals by scaling and adding the two output voltage signals from the transimpedance amplifier. The signal linearizer can be formed either as an analog device using one or two summing amplifiers, or alternately can be formed as a digital device using two analog-to-digital converters and a digital signal processor (e.g. a microprocessor or a computer).
    Type: Grant
    Filed: October 20, 2009
    Date of Patent: November 2, 2010
    Assignee: Sandia Corporation
    Inventor: Kurt O. Wessendorf
  • Patent number: 7826065
    Abstract: An atomic magnetometer is disclosed which utilizes an optical cavity formed from a grating and a mirror, with a vapor cell containing an alkali metal vapor located inside the optical cavity. Lasers are used to magnetically polarize the alkali metal vapor and to probe the vapor and generate a diffracted laser beam which can be used to sense a magnetic field. Electrostatic actuators can be used in the magnetometer for positioning of the mirror, or for modulation thereof. Another optical cavity can also be formed from the mirror and a second grating for sensing, adjusting, or stabilizing the position of the mirror.
    Type: Grant
    Filed: July 15, 2008
    Date of Patent: November 2, 2010
    Assignee: Sandia Corporation
    Inventors: Murat Okandan, Peter Schwindt
  • Patent number: 7820970
    Abstract: A thermal microphotonic sensor is fabricated on a silicon substrate by etching an opening and a trench into the substrate, and then filling in the opening and trench with silicon oxide which can be deposited or formed by thermally oxidizing a portion of the silicon substrate surrounding the opening and trench. The silicon oxide forms a support post for an optical resonator which is subsequently formed from a layer of silicon nitride, and also forms a base for an optical waveguide formed from the silicon nitride layer. Part of the silicon substrate can be selectively etched away to elevate the waveguide and resonator. The thermal microphotonic sensor, which is useful to detect infrared radiation via a change in the evanescent coupling of light between the waveguide and resonator, can be formed as a single device or as an array.
    Type: Grant
    Filed: June 25, 2009
    Date of Patent: October 26, 2010
    Assignee: Sandia Corporation
    Inventors: Michael J. Shaw, Michael R. Watts, Gregory N. Nielson
  • Patent number: 7790051
    Abstract: A method is disclosed for isolating single atoms of an atomic species of interest by locating the atoms within silicon nanocrystals. This can be done by implanting, on the average, a single atom of the atomic species of interest into each nanocrystal, and then measuring an electrical charge distribution on the nanocrystals with scanning capacitance microscopy (SCM) or electrostatic force microscopy (EFM) to identify and select those nanocrystals having exactly one atom of the atomic species of interest therein. The nanocrystals with the single atom of the atomic species of interest therein can be sorted and moved using an atomic force microscope (AFM) tip. The method is useful for forming nanoscale electronic and optical devices including quantum computers and single-photon light sources.
    Type: Grant
    Filed: October 31, 2007
    Date of Patent: September 7, 2010
    Assignee: Sandia Corporation
    Inventor: Malcolm S. Carroll
  • Patent number: 7787719
    Abstract: An optical data latch is formed on a substrate from a pair of optical logic gates in a cross-coupled arrangement in which optical waveguides are used to couple an output of each gate to an photodetector input of the other gate. This provides an optical bi-stability which can be used to store a bit of optical information in the latch. Each optical logic gate, which can be an optical NOT gate (i.e. an optical inverter) or an optical NOR gate, includes a waveguide photodetector electrically connected in series with a waveguide electroabsorption modulator. The optical data latch can be formed on a III-V compound semiconductor substrate (e.g. an InP or GaAs substrate) from III-V compound semiconductor layers. A number of optical data latches can be cascaded to form a clocked optical data shift register.
    Type: Grant
    Filed: September 11, 2009
    Date of Patent: August 31, 2010
    Assignee: Sardia Corporation
    Inventor: G. Allen Vawter
  • Patent number: 7755079
    Abstract: An infrared focal plane array (FPA) is disclosed which utilizes a strained-layer superlattice (SLS) formed of alternating layers of InAs and InxGa1?xSb with 0?x?0.5 epitaxially grown on a GaSb substrate. The FPA avoids the use of a mesa structure to isolate each photodetector element and instead uses impurity-doped regions formed in or about each photodetector for electrical isolation. This results in a substantially-planar structure in which the SLS is unbroken across the entire width of a 2-D array of the photodetector elements which are capped with an epitaxially-grown passivation layer to reduce or eliminate surface recombination. The FPA has applications for use in the wavelength range of 3-25 ?m.
    Type: Grant
    Filed: August 17, 2007
    Date of Patent: July 13, 2010
    Assignee: Sandia Corporation
    Inventors: Jin K. Kim, Malcolm S. Carroll, Aaron Gin, Phillip F. Marsh, Erik W. Young, Michael J. Cich
  • Patent number: 7719318
    Abstract: A nanoelectromechanical (NEM) switch is formed on a substrate with a source electrode containing a suspended electrically-conductive beam which is anchored to the substrate at each end. This beam, which can be formed of ruthenium, bows laterally in response to a voltage applied between a pair of gate electrodes and the source electrode to form an electrical connection between the source electrode and a drain electrode located near a midpoint of the beam. Another pair of gate electrodes and another drain electrode can be located on an opposite side of the beam to allow for switching in an opposite direction. The NEM switch can be used to form digital logic circuits including NAND gates, NOR gates, programmable logic gates, and SRAM and DRAM memory cells which can be used in place of conventional CMOS circuits, or in combination therewith.
    Type: Grant
    Filed: November 5, 2008
    Date of Patent: May 18, 2010
    Assignee: Sandia Corporation
    Inventors: Christopher D. Nordquist, David A. Czaplewski
  • Patent number: 7714240
    Abstract: A microfabricated vacuum switch is disclosed which includes a substrate upon which an anode, cathode and trigger electrode are located. A cover is sealed over the substrate under vacuum to complete the vacuum switch. In some embodiments of the present invention, a metal cover can be used in place of the trigger electrode on the substrate. Materials used for the vacuum switch are compatible with high vacuum, relatively high temperature processing. These materials include molybdenum, niobium, copper, tungsten, aluminum and alloys thereof for the anode and cathode. Carbon in the form of graphitic carbon, a diamond-like material, or carbon nanotubes can be used in the trigger electrode. Channels can be optionally formed in the substrate to mitigate against surface breakdown.
    Type: Grant
    Filed: September 21, 2005
    Date of Patent: May 11, 2010
    Assignee: Sandia Corporation
    Inventors: Alexander W. Roesler, Joshua M. Schare, Kyle Bunch
  • Patent number: 7710232
    Abstract: A microelectromechanical tunable inductor is formed from a pair of substantially-identically-sized coils arranged side by side and coiled up about a central axis which is parallel to a supporting substrate. An in-plane stress gradient is responsible for coiling up the coils which. The inductance provided by the tunable inductor can be electrostatically changed either continuously or in discrete steps using electrodes on the substrate and on each coil. The tunable inductor can be formed with processes which are compatible with conventional IC fabrication so that, in some cases, the tunable inductor can be formed on a semiconductor substrate alongside or on top of an IC.
    Type: Grant
    Filed: May 9, 2007
    Date of Patent: May 4, 2010
    Assignee: Sandia Corporation
    Inventors: Harold L. Stalford, Vincent M. Hietala, James G. Fleming, Carol Fleming, legal representative
  • Patent number: 7683310
    Abstract: A laser warning receiver is disclosed which has up to hundreds of individual optical channels each optically oriented to receive laser light from a different angle of arrival. Each optical channel has an optical wedge to define the angle of arrival, and a lens to focus the laser light onto a multi-wavelength photodetector for that channel. Each multi-wavelength photodetector has a number of semiconductor layers which are located in a multi-dielectric stack that concentrates the laser light into one of the semiconductor layers according to wavelength. An electrical signal from the multi-wavelength photodetector can be processed to determine both the angle of arrival and the wavelength of the laser light.
    Type: Grant
    Filed: April 24, 2008
    Date of Patent: March 23, 2010
    Assignee: Sandia Corporation
    Inventors: Michael B. Sinclair, William C. Sweatt
  • Patent number: 7667200
    Abstract: A thermal microphotonic sensor is disclosed for detecting infrared radiation using heat generated by the infrared radiation to shift the resonant frequency of an optical resonator (e.g. a ring resonator) to which the heat is coupled. The shift in the resonant frequency can be determined from light in an optical waveguide which is evanescently coupled to the optical resonator. An infrared absorber can be provided on the optical waveguide either as a coating or as a plate to aid in absorption of the infrared radiation. In some cases, a vertical resonant cavity can be formed about the infrared absorber to further increase the absorption of the infrared radiation. The sensor can be formed as a single device, or as an array for imaging the infrared radiation.
    Type: Grant
    Filed: December 5, 2007
    Date of Patent: February 23, 2010
    Assignee: Sandia Corporation
    Inventors: Michael R. Watts, Michael J. Shaw, Gregory N. Nielson, Anthony L. Lentine
  • Patent number: 7652547
    Abstract: A method is disclosed for the robust fabrication of a microelectromechanical (MEM) resonator. In this method, a pattern of holes is formed in the resonator mass with the position, size and number of holes in the pattern being optimized to minimize an uncertainty ?f in the resonant frequency f0 of the MEM resonator due to manufacturing process variations (e.g. edge bias). A number of different types of MEM resonators are disclosed which can be formed using this method, including capacitively transduced Lamé, wineglass and extensional resonators, and piezoelectric length-extensional resonators.
    Type: Grant
    Filed: November 12, 2008
    Date of Patent: January 26, 2010
    Assignee: Sandia Corporation
    Inventors: Jonathan W. Wittwer, Roy H. Olsson
  • Patent number: 7633362
    Abstract: A microelectromechanical (MEM) device is disclosed that includes a shuttle suspended for movement above a substrate. A plurality of permanent magnets in the shuttle of the MEM device interact with a metal plate which forms the substrate or a metal portion thereof to provide an eddy-current damping of the shuttle, thereby making the shuttle responsive to changes in acceleration or velocity of the MEM device. Alternately, the permanent magnets can be located in the substrate, and the metal portion can form the shuttle. An electrical switch closure in the MEM device can occur in response to a predetermined acceleration-time event. The MEM device, which can be fabricated either by micromachining or LIGA, can be used for sensing an acceleration or deceleration event (e.g. in automotive applications such as airbag deployment or seat belt retraction).
    Type: Grant
    Filed: September 17, 2007
    Date of Patent: December 15, 2009
    Assignee: Sandia Corporation
    Inventors: Todd R. Christenson, Marc A. Polosky
  • Patent number: 7616850
    Abstract: Optical ring resonator devices are disclosed that can be used for optical filtering, modulation or switching, or for use as photodetectors or sensors. These devices can be formed as microdisk ring resonators, or as open-ring resonators with an optical waveguide having a width that varies adiabatically. Electrical and mechanical connections to the open-ring resonators are made near a maximum width of the optical waveguide to minimize losses and thereby provide a high resonator Q. The ring resonators can be tuned using an integral electrical heater, or an integral semiconductor junction.
    Type: Grant
    Filed: April 9, 2008
    Date of Patent: November 10, 2009
    Assignee: Sandia Corporation
    Inventors: Michael R. Watts, Douglas C. Trotter, Ralph W. Young, Gregory N. Nielson
  • Patent number: 7616077
    Abstract: A method is disclosed for the robust fabrication of a microelectromechanical (MEM) resonator. In this method, a pattern of holes is formed in the resonator mass with the position, size and number of holes in the pattern being optimized to minimize an uncertainty ?f in the resonant frequency f0 of the MEM resonator due to manufacturing process variations (e.g. edge bias). A number of different types of MEM resonators are disclosed which can be formed using this method, including capacitively transduced Lamé, wineglass and extensional resonators, and piezoelectric length-extensional resonators.
    Type: Grant
    Filed: March 22, 2007
    Date of Patent: November 10, 2009
    Assignee: Sandia Corporation
    Inventors: Jonathan W. Wittwer, Roy H. Olsson
  • Patent number: 7564387
    Abstract: An optical analog-to-digital converter (ADC) is disclosed which converts an input optical analog signal to an output optical digital signal at a sampling rate defined by a sampling optical signal. Each bit of the digital representation is separately determined using an optical waveguide interferometer and an optical thresholding element. The interferometer uses the optical analog signal and the sampling optical signal to generate a sinusoidally-varying output signal using cross-phase-modulation (XPM) or a photocurrent generated from the optical analog signal. The sinusoidally-varying output signal is then digitized by the thresholding element, which includes a saturable absorber or at least one semiconductor optical amplifier, to form the optical digital signal which can be output either in parallel or serially.
    Type: Grant
    Filed: February 29, 2008
    Date of Patent: July 21, 2009
    Assignee: Sandia Corporation
    Inventors: G. Allen Vawter, James Raring, Erik J. Skogen
  • Patent number: 7540469
    Abstract: A microelectromechanical (MEM) flow control apparatus is disclosed which includes a fluid channel formed on a substrate from a first layer of a nonconducting material (e.g. silicon nitride). A first electrode is provided on the first layer of the nonconducting material outside the flow channel; and a second electrode is located on a second layer of the nonconducting material above the first layer. A voltage applied between the first and second electrodes deforms the fluid channel to increase its cross-sectional size and thereby increase a flow of a fluid through the channel. In certain embodiments of the present invention, the fluid flow can be decreased or stopped by applying a voltage between the first electrode and the substrate. A peristaltic pumping of the fluid through the channel is also possible when the voltage is applied in turn between a plurality of first electrodes and the substrate.
    Type: Grant
    Filed: January 25, 2005
    Date of Patent: June 2, 2009
    Assignee: Sandia Corporation
    Inventor: Murat Okandan