Patents Represented by Attorney John T. Rebberg

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  • Integrated circuit
    Patent number: 5128738
    Abstract: A semiconductor memory cell with parallel gates is disclosed. The direction of the gates is desirably chosen to minimize lithographic astigmatic effects. Thus gates of comparatively uniform width are produced and predictability of transistor performance thereby improved. Another embodiment of the invention features a connetion between two conductive layers and a source/drain. The connection forms a node between one access transistor and one pull-down transistor.
    Type: Grant
    Filed: May 16, 1991
    Date of Patent: July 7, 1992
    Assignee: AT&T Bell Laboratories
    Inventors: Kuo-Hua Lee, William J. Nagy, Janmye Sung