Patents Represented by Attorney, Agent or Law Firm Johnson Kindess PLLC
  • Method of forming a gate oxide layer with an improved ability to resist the process damage
    Patent number: 6432786
    Abstract: A method of forming a gate oxide layer with improved ability to resist process damage increases the reliability and yield of a transistor device. First, a nitrogen-containing gate oxide layer is formed on an element area of a silicon substrate. Then, a polysilicon layer is deposited on the gate oxide layer. Next, a gate doping process and a fluorine ion implantation are performed on the polysilicon layer. Then, a high-temperature tempering procedure is performed to make the fluorine enter the gate oxide layer.
    Type: Grant
    Filed: April 9, 2001
    Date of Patent: August 13, 2002
    Assignee: National Science Council
    Inventors: Chi-Chun Chen, Horng-Chih Lin, Chun-Yen Chang, Tiao-Yuan Huang