Abstract: Compositions are provided which can be used for treating photoresist patterns in the manufacture of electronic devices. The compositions allow for the formation of fine lithographic patterns and find particular applicability in semiconductor device manufacture.

Abstract: Methods of forming electronic devices are provided. The methods involve alkaline treatment of photoresist patterns and allow for the formation of high density resist patterns. The methods find particular applicability in semiconductor device manufacture.

Abstract: Electronic devices having a metal line-containing layer including an air gap region and a low-k dielectric material region where the air gap region includes a dense packing of metal lines is provided. Methods of forming such electronic devices are also provided.

Abstract: Topcoat layer compositions are provided that are applied above a photoresist composition. The compositions find particular applicability to immersion lithography processing.

Abstract: A curable aryl siloxane composition is disclosed. A heat stable cured aryl polysiloxane composition is further disclosed, along with a method of making that heat stable cured aryl polysiloxane composition from the curable aryl siloxane composition. An encapsulated semiconductor device, and a method of making that encapsulated semiconductor device by coating a semiconductor element of a semiconductor device with the heat stable cured aryl polysiloxane are further disclosed.

Abstract: A curable aryl (thio)ether aryl silicon composition is disclosed. A cured aryl (thio)ether aryl polysiloxane composition is further disclosed, along with a method of making that cured aryl (thio)ether aryl polysiloxane composition from the curable aryl (thio)ether aryl silicon composition. An encapsulated semiconductor device, and a method of making that encapsulated semiconductor device by coating a semiconductor element of a semiconductor device with cured aryl (thio)ether aryl polysiloxane are further disclosed.

Abstract: Overcoating layer compositions are provided that are applied above a photoresist composition including for immersion lithography processing as well as non-immersion imaging.

Abstract: A (thio)phenoxyphenyl phenyl silane composition is disclosed. A method of making the (thio)phenoxyphenyl phenyl silane composition is also disclosed, the method further including a step of purification. A high purity (thio)phenoxyphenyl phenyl silane composition suitable for use in the preparation of encapsulants for high brightness light emitting devices is further disclosed.

Abstract: A light extraction encapsulant sheet having a patterned encapsulant region is disclosed. A method of making that light extraction encapsulant sheet and of affixing that light extraction encapsulant sheet to a luminous stack surface of a multi-layer stack is also disclosed.

Abstract: Photoresist compositions and methods suitable for depositing a thick photoresist layer in a single coating application are provided. Such photoresist layers are particularly suitable for use in chip scale packaging, for example, in the formation of metal bumps.

Abstract: A method of forming air gaps within a solid structure is provided. In this method, a sacrificial material is covered by an overlayer. The sacrificial material is then removed through the overlayer to leave an air gap. Such air gaps are particularly useful as insulation between metal lines in an electronic device such as an electrical interconnect structure. Structures containing air gaps are also provided.

Abstract: Provided are polymers comprising the condensation product of silicon-containing reactants. Also provided are compositions suitable for use in forming optical waveguides which include such polymers, as well as optical waveguides formed from such polymers. The polymers, compositions and optical waveguides have particular use in the formation of printed wiring boards having electrical and optical functionality.

Abstract: Provided are methods of forming a printed circuit board having optical functionality. The methods involve: (a) providing a first, printed circuit board substrate; (b) forming an optical waveguide structure comprising a clad and a core structure on a second substrate separate from the printed circuit board substrate, wherein the optical waveguide structure comprises a silicon-containing material; (c) separating the optical waveguide structure from the second substrate; and (d) affixing the optical waveguide structure to the printed circuit board substrate. The invention has particular applicability in the electronics and optoelectronics industries for the formation of hybrid printed circuit boards.

Abstract: Provided are methods of forming printed circuit boards having optical functionality. The methods involve applying a dry-film to a printed circuit board substrate and forming an optical waveguide over the dry-film. The invention finds particular applicability in the electronics and optoelectronics industries.

Abstract: A light emitting device including a multi-layer stack and an encapsulant layer having a patterned encapsulant region in optical proximity to a luminous stack surface of the multi-layer stack is disclosed. A method of making that encapsulant layer and of affixing that encapsulant layer to a luminous stack surface is also disclosed.

Abstract: A photosensitive resin composition and a method for the formation of a resin pattern using the photosensitive resin composition are provided. The photosensitive resin composition contains, as a catalyst precursor, a catalytic metal element with a metal-deposition catalytic activity suitable for electroless metal plating. The method for the formation of a resin pattern uses a photosensitive resin composition, which contains, as a catalyst precursor, a catalytic metal element with a metal-deposition catalytic activity suitable for electroless metal plating. By using the method of this invention, it is possible to form a conductive film selectively on a resin pattern formed through exposure and development of the photosensitive resin composition of this invention.

Abstract: A fiber optic termination and method for the fabrication thereof are provided. The fiber optic termination (325) is configured to provide coupling of light between the fiber core (326) and an external optical element from a direction other than the direction of the longitudinal axis. In particular, the fiber optic termination permits coupling of light to a fiber at an angle that is substantially perpendicular to the longitudinal axis of the fiber.

Abstract: Provided are coaxial waveguide microstructures. The microstructures include a substrate and a coaxial waveguide disposed above the substrate. The coaxial waveguide includes: a center conductor; an outer conductor including one or more walls, spaced apart from and disposed around the center conductor; one or more dielectric support members for supporting the center conductor in contact with the center conductor and enclosed within the outer conductor; and a core volume between the center conductor and the outer conductor, wherein the core volume is under vacuum or in a gas state. Also provided are methods of forming coaxial waveguide microstructures by a sequential build process and hermetic packages which include a coaxial waveguide microstructure.

Abstract: An optical microbench configured to facilitate wafer-level testing of opto-electronic devices is provided. The optical microbench includes an optoelectronic device mounted to a wafer in which the optical microbench is provided. The optical microbench also includes a beam deflector provided in the wafer and disposed along the optical path of the optoelectronic device. The beam deflector is configured to deflect a portion of the optical path to lie along a direction oriented out of the plane of the wafer. The optical microbench further includes an optical feed-through disposed along the optical path between the optoelectronic device and the beam deflector. The optical feed-through is configured to conduct an optical signal between the beam deflector and the optoelectronic device. A method for testing optoelectronic devices at the wafer level is also provided.

Abstract: Provided are optoelectronic components which include an optoelectronic device and a structure for self-aligning the optoelectronic device. Also provided are optoelectronic modules and methods of forming optoelectronic components.