Abstract: In a system bus having a master-slave architecture, shared memory controlled by a plurality of registers, master-slave central processing units, and master-slave bus controllers, a process of reading and writing data to the shared memory is disclosed. The process comprises the steps of requesting access to the shared memory by the central processing units by writing a request bit on a first register; reading an access bit on a second register to determine whether the access bit is set and access to shared memory is granted; reading or writing data to the shared memory by the central processing units; and reading the access bit on the second register to determine whether the access bit is cleared and access to the shared memory is complete. The access bit is set by the master-slave bus controller.
Type:
Grant
Filed:
June 7, 1995
Date of Patent:
September 9, 1997
Assignee:
Samsung Electronics Inc.
Inventors:
Gananathan Suresh, Ki B. Kang, Young Il Kim
Abstract: A method is provided of fabricating a semiconductor device having a wiring layer of a desired resistance component and capable of eliminating variation of wiring resistance by causing breakage of an Al or Al alloy layer of a laminated structure at certain positions. The multilayer conductive patterns of the invention include a laminate of a low melting point conductive layer formed of at least aluminum and a high melting point conductive layer. The side surfaces of the low melting point conductive layer includes recessed portions located at spaced apart length intervals of the multilayer conductive patterns.