Abstract: An optimum pathway to data stored on a data storage system having N storage devices and more than N pathways is determined in response to a read request for the data. A sorter separates the read request into an appropriate segment size for sending to the storage devices of the data storage system. An assigner generates the set of read permutations satisfying the read request. A read permutation is selected based on a metric. A collector receives the requested data from the N storage devices in response to the selected read permutation being sent to the storage devices.

Abstract: An optimum pathway to data stored on a data storage system having N storage devices and more than N pathways is determined in response to a read request for the data. A sorter separates the read request into an appropriate segment size for sending to the storage devices of the data storage system. An assigner generates the set of read permutations satisfying the read request. A read permutation is selected based on a metric. A collector receives the requested data from the N storage devices in response to the selected read permutation being sent to the storage devices.

Abstract: A SiGe HBT BiCMOS on a SOI substrate includes a self-aligned base/emitter junction to optimize the speed of the HBT device. The disclosed SiGe BiCMOS/SOI device has a higher performance than a SiGe BiCMOS device on a bulk substrate. The disclosed device and method of fabricating the same also retains the high performance of a SiGe HBT and the low power, high-speed properties of a SOI CMOS. In addition, the disclosed method of fabricating a self-aligned base/emitter junction provides a HBT transistor having an improved frequency response.