Abstract: The present invention provides an organosilicon composition comprising diethoxymethylsilane, a concentration of dissolved residual chloride, and a concentration of dissolved residual chloride scavenger that does not yield unwanted chloride salt precipitate when combined with another composition comprising diethoxymethylsilane.

Abstract: The present invention is a process of making a germanium-antimony-tellurium alloy film using a process selected from the group consisting of atomic layer deposition and chemical vapor deposition, wherein a silylantimony precursor is used as a source of antimony for the alloy film. Novel silylantimony compounds are also disclosed.

Abstract: A porous organosilica glass (OSG) film consists of a single phase of a material represented by the formula SivOwCxHyFz, where v+w+x+y+z=100%, v is from 10 to 35 atomic %, w is from 10 to 65 atomic %, x is from 5 to 30 atomic %, y is from 10 to 50 atomic % and z is from 0 to 15 atomic %, wherein the film has pores and a dielectric constant less than 2.6.

Abstract: A process for preparing a multi-layer substrate is described herein. In one embodiment, the process provides a multi-layer substrate comprising a first layer and a second layer where the process comprises the steps of providing the first layer comprising a barrier area and a copper area; and depositing the second layer comprising copper onto the first layer wherein the depositing provides the second layer comprising a first thickness ranging from about 20 Angstroms to about 2,000 Angstroms onto the barrier area and a second thickness ranging from about 0 Angstroms to about 1,000 Angstroms onto the copper area in the first layer wherein the first thickness is greater than the second thickness.

Abstract: Novel Sr and Ba complexes containing both beta-diketonates and N-methyl-pyrrolidone were synthesized and characterized. TGA experiments indicated these complexes are volatile, they can be employed as precursors for ALD strontium titanate (STO) or barium strontium titanate films (BST) films in semiconductor fabrication.

Abstract: A stabilized cyclic alkene composition comprising one or more cyclic alkenes, and at least one stabilizer compound having the Formula (I), R1,R2,R3,R4,R5(C6)OH??Formula (I) wherein R? through R5 can each independently be H, OH, C1-C8 linear, branched, or cyclic alkyl, C1-C8 linear, branched, or cyclic alkoxy or substituted or unsubstituted aryl, and wherein the stabilizer compound is present in an amount greater than 200 ppm up to 20,000 ppm and has a boiling point lower than 265° C. A method for forming a layer of carbon-doped silicon oxide on a substrate, which uses the stabilized alkene composition and a silicon containing compound.

Abstract: The present invention relates to semi-aqueous formulations and the method using same, to remove bulk photoresists, post-etched and post-ashed residues, as well as contaminations. The formulation comprises: an alkanolamine, a water miscible organic co-solvent, a quarternary ammonium compound, a non-free acid functionality corrosion inhibitor, and remainder water. The pH is greater than 9.

Abstract: A cyclic deposition process to make a metal oxide film on a substrate, which comprises the steps: introducing a metal ketoiminate into a deposition chamber and depositing the metal ketoiminate on a heated substrate; purging the deposition chamber to remove unreacted metal ketominate and any byproduct; introducing an oxygen-containing source to the heated substrate; purging the deposition chamber to remove any unreacted chemical and byproduct; and, repeating the cyclic deposition process until a desired thickness of film is established.

Abstract: Devices and methods facilitate inspections, repairs, and other operations within vessels without human entry into the vessels, and without introducing contaminants that could reduce the purity of materials held in the vessels below predetermined minimum levels.

Abstract: A porous organosilica glass (OSG) film consists of a single phase of a material represented by the formula SivOwCxHyFz, where v+w+x+y+z=100%, v is from 10 to 35 atomic %, w is from 10 to 65 atomic %, x is from 5 to 30 atomic %, y is from 10 to 50 atomic % and z is from 0 to 15 atomic %, wherein the film has pores and a dielectric constant less than 2.6. The film is provided by a chemical vapor deposition method in which a preliminary film is deposited from organosilane and/or organosiloxane precursors and pore-forming agents (porogens), which can be independent of, or bonded to, the precursors. The porogens are subsequently removed to provide the porous film. Compositions, such as kits, for forming the films include porogens and precursors. Porogenated precursors are also useful for providing the film.

Abstract: Low dielectric materials and films comprising same have been identified for improved performance when used as interlevel dielectrics in integrated circuits as well as methods for making same. In one aspect of the present invention, an organosilicate glass film is exposed to an ultraviolet light source wherein the film after exposure has an at least 10% or greater improvement in its mechanical properties (i.e., material hardness and elastic modulus) compared to the as-deposited film.

Abstract: The present invention relates to an aqueous cleaning composition used to remove unwanted organic and inorganic residues and contaminants from a substrate such as, for example, a semiconductor substrate. The cleaning composition comprises from about 0.01% to about 40% by weight of a salt selected from a guanidinium salt, an acetamidinium salt, a formamidinium salt, and mixtures thereof; water; and optionally a water soluble organic solvent. Compositions according to the present invention are free of an oxidizer and abrasive particles and are capable of removing residues from a substrate and, particularly, a substrate having silicon-containing BARC and/or photoresist residue.

Abstract: A method for restoring a dielectric constant of a layer of a silicon-containing dielectric material having a first dielectric constant and at least one surface, wherein the first dielectric constant of the layer of silicon-containing dielectric material has increased to a second dielectric constant, the method comprising the steps of: contacting the at least one surface of the layer of silicon-containing dielectric material with a silicon-containing fluid; and exposing the at least one surface of the layer of silicon-containing dielectric material to an energy source selected from the group consisting of: UV radiation, heat, and an electron beam, wherein the layer of silicon-containing dielectric material has a third dielectric constant that is lower than the second dielectric constant after exposing the layer of silicon-containing dielectric material to the energy source.

Abstract: Gas compression system comprising a compression cylinder having a gas inlet, a compressed gas outlet, and one or more liquid transfer ports; a pump having a suction and a discharge; and a compressor liquid. The system also includes any of the following: a pressure intensifier having an inlet in flow communication with the pump and an outlet in flow communication with the compression cylinder; a feed eductor in flow communication with the discharge of the pump, with a reservoir containing a portion of the compressor liquid, and with the compression cylinder; a drain eductor in flow communication with the discharge of the pump, with the compression cylinder, and with a reservoir containing a portion of the compressor liquid; and a variable-volume compressor liquid accumulator in flow communication with the discharge of the pump.

Abstract: Low dielectric materials and films comprising same have been identified for improved performance when used as interlevel dielectrics in integrated circuits as well as methods for making same. In certain embodiments of the invention, there is provided a low-temperature process to remove at least a portion of at least one pore-forming material within a composite film thereby forming a porous film. The pore-forming material may be removed via exposure to at least one energy source, preferably an ultraviolet light source, in a non-oxidizing atmosphere.

Abstract: Low dielectric materials and films comprising same have been identified for improved performance when used as interlevel dielectrics in integrated circuits as well as methods for making same. In one aspect of the present invention, an organosilicate glass film is exposed to an ultraviolet light source wherein the film after exposure has an at least 10% or greater improvement in its mechanical properties (i.e., material hardness and elastic modulus) compared to the as-deposited film.

Abstract: A heater for fluid flow components. The heater has heat transfer surfaces that engage the component. The transfer surfaces are mounted on jaws that are movable to engage the component. The jaws have massive portions that act as heat reservoirs to maintain a constant temperature in spite of rapid cooling when gas is allowed to expand freely from the component. The jaws are heated by electrical resistive heating elements that are sealingly mounted within the massive portions. The sealing engagement allows the heater to be used in hazardous environments.

Abstract: A process for the selective removal of a substance from a substrate for etching and/or cleaning applications is disclosed herein. In one embodiment, there is provided a process for removing a substance from a substrate comprising: providing the substrate having the substance deposited thereupon wherein the substance comprises a transition metal ternary compound, a transition metal quaternary compound, and combinations thereof; reacting the substance with a process gas comprising a fluorine-containing gas and optionally an additive gas to form a volatile product; and removing the volatile product from the substrate to thereby remove the substance from the substrate.

Abstract: Disclosed herein are process solutions, which may be aqueous-based, non-aqueous-based, and combinations thereof, that contain at least one alkoxylated acetylenic diol surfactant. In one aspect, the process solution comprises water and an alkoxylated acetylenic diol surfactant having the formula A: where r and t are 1 or 2, (n+m) is 1 to 30 and (p+q) is 1 to 30.

Abstract: Aqueous polyurethane dispersions comprising polyurethane polymer and methods for making and using same are disclosed herein. In one aspect of the present invention, aqueous polyurethane dispersions, comprising a polyurethane polymer having a weight average molecular weight ranging from 20,000 to 80,000, are prepared by controlling the weight average molecular weight of the polymer by reacting the isocyanate terminated prepolymer with at least one chain terminating agent; and/or maintaining a N/COOH molar ratio of amine in the neutralizing agent to acid functional group in the isocyanate reactive compound to from about 0.5:1 to about 1:1.