Abstract: A method for removing defects at high pressure and high temperature (HP/HT) or for relieving strain in a non-diamond crystal commences by providing a crystal, which contains defects, and a pressure medium. The crystal and the pressure medium are disposed in a high pressure cell and placed in a high pressure apparatus, for processing under reaction conditions of sufficiently high pressure and high temperature for a time adequate for one or more of removing defects or relieving strain in the single crystal.

Abstract: The present invention is directed to a method of making metal oxide and mixed metal oxide particles. The method includes treating a mixture formed from a metal source, such as metal alkoxide, a surfactant, and a first alcohol in an aqueous media at a very high metal oxide yield. The mixture is reacted using a catalyst to form metal oxide particles having a desired particle size in said mixture. The method is particularly suitable for forming silica particles. The metal oxide particles can then be heat treated to form synthetic fused metal oxides such as, for example, synthetic fused silica.

Abstract: There is disclosed a wafer processing apparatus having optimized electrode patterns for its resistive heating element. The optimized electrode pattern is designed to compensate for the heat loss around contact areas, electrical connections, and through-holes, etc., by generating more heat near or around those areas, providing maximum temperature uniformity. In another embodiment of the optimized design of the invention, the resistance of heating element closely matches the impedance of the power supply for higher efficiency, especially when higher operating temperature or higher electrical power is required.

Abstract: A heater has a smooth heating surface and a recess formed on a second surface opposite to the heating surface. The recess is formed between opposite side walls in a lengthwise direction of the heater. Formation of the recess improves the electrical resistance of the heater and the opposite side walls reinforce the heater and prevent deformation of the heater when it is subjected to high temperatures in a semiconductor wafer processing device. The heater has substantially the same width along its lengthwise direction. This improves the control of heat pattern design, because the terminal end portions do not have an expanded shape.

Abstract: There is provided an electronic device. The electronic device includes at least one epitaxial semiconductor layer disposed on a single crystal substrate comprised of gallium nitride having a dislocation density less than about 105 per cm2. A method of forming an electronic device is also provided. The method includes providing a single crystal substrate comprised of gallium nitride having a dislocation density less than about 105 per cm2, and homoepitaxially forming at least one semiconductor layer on the substrate.

Abstract: The present invention relates to polyurethane foam-forming composition containing polysilsesquioxanes that provide high resilience flexible polyurethane molded foams having improved foam dimensional stability.

Abstract: The present invention is directed to an apparatus for distributing a cable-pulling composition onto a cable as it is being pulled through a conduit. In one embodiment, the cable pulling composition is a block of an enhanced composition, e.g., consisting essentially of boron nitride that facilitates the pulling of cables through conduits. The invention further relates to a method for pulling cables through conduits by applying an effective amount of boron nitride composition onto the cable surface through the use of the cable-pulling apparatus of the invention.

Abstract: The present invention relates to polyurethane foam prepared from a polyurethane foam-forming reaction mixture possessing a silicone copolymer surfactant, methods for making the surfactant, and a process for preparing low density polyurethane foams.

Abstract: A composition including a polycrystalline metal nitride having a number of grains is provided. These grains have a columnar structure with one or more properties such as, an average grain size, a tilt angle, an impurity content, a porosity, a density, and an atomic fraction of the metal in the metal nitride.

Abstract: A composition for coating sliding or rolling or fretting or impacting members is formed by preparing a composite powder of TiB2 and BN, with a TiB2 to BN ratio ranging from 1:7 to 20:1, and a metallic matrix selected from the group consisting of nickel, chromium, iron, cobalt, aluminum, tungsten, carbon and alloys thereof.

Abstract: A low viscosity filler boron nitride agglomerate particles having a generally spherical shape bound together by an organic binder and to a process for producing a BN powder composition of spherically shaped boron nitride agglomerated particles having a treated surface layer which controls its viscosity.

Abstract: A composition including a polycrystalline metal nitride having a number of grains is provided. These grains have a columnar structure with one or more properties such as, an average grain size, a tilt angle, an impurity content, a porosity, a density, and an atomic fraction of the metal in the metal nitride. An apparatus for preparing a metal nitride is provided. The apparatus may include a housing having an interior surface that defines a chamber and an energy source to supply energy to the chamber. A first inlet may be provided to flow a nitrogen-containing gas into the chamber. Raw materials may be introduced into the chamber through a raw material inlet. A second inlet may be provided to flow in a halide-containing gas in the chamber. The apparatus may further include a controller, which communicates with the various components of the apparatus such as, sensors, valves, and energy source, and may optimize and control the reaction.

Abstract: A method of making a metal nitride is provided. The method may include introducing a metal in a chamber. A nitrogen-containing material may be flowed into the chamber. Further, a hydrogen halide may be introduced. The nitrogen-containing material may react with the metal in the chamber to form the metal nitride.

Abstract: An article with an etch resistant coating is disclosed. The article is a heating element, wafer carrier, or electrostatic chuck. The article has a base substrate made of a ceramic or other material, and further has one or more electrodes for resistance heating or electromagnetic chucking or both. The eth resistant coating has a plurality of regions made from materials having different electrical volume resistivities, such that the overall coating has a bulk resistivity that can be tailored by varying the relative size of each region.

Abstract: A heating apparatus for regulating/controlling the surface temperature of a substrate is provided. At least a thermal pyrolytic graphite (TPG) layer is embedded in the heater to diffuse the temperature difference of the various components in the heating apparatus and provide temporal and spatial control of the surface temperature of the substrate, for a relatively uniform substrate temperature with the difference between the maximum and minimum temperature points on the substrate of less than 10° C.

Abstract: The present invention is directed to enhanced compositions that facilitate the pulling of cables through conduits. In one embodiment, the composition comprises a sufficient amount of boron nitride, which, upon application onto the cable surface, allows the cable to be pulled faster and/or with less force through the conduit than without the boron nitride present. The invention further relates to a method for pulling cables through conduits by applying an effective amount of boron nitride composition onto the cable surface. Lastly, the invention relates to an apparatus for distributing a cable-pulling composition comprising a block of boron nitride onto a cable as it is being pulled through a conduit.

Abstract: A method of making a cubic halide scintillator material includes pressing a powder mixture of cubic halide and at least one activator under conditions of pressure, temperature, residence time and particle size effective to provide a polycrystalline sintered cubic halide scintillator having a pulse height resolution of from about 7% to about 20%. The conditions include a temperature ranging from about ambient temperature up to about 90% of the melting point of the cubic halide, a pressure of from about 30,000 psi to about 200,000 psi, a pressing residence time of from about 5 minutes to about 120 minutes and an average cubic halide particle size of from about 60 micrometers to about 275 micrometers.

Abstract: A crystalline composition is provided that includes gallium and nitrogen. The crystalline composition may have an amount of oxygen present in a concentration of less than about 3×1018 per cubic centimeter, and may be free of two-dimensional planar boundary defects in a determined volume of the crystalline composition. The volume may have at least one dimension that is about 2.75 millimeters or greater, and the volume may have a one-dimensional linear defect dislocation density of less than about 10,000 per square centimeter.

Abstract: A crystal comprising gallium nitride is disclosed. The crystal has at least one grain having at least one dimension greater than 2.75 mm, a dislocation density less than about 104 cm?2, and is substantially free of tilt boundaries.

Abstract: A layered heater structure including an electrode layer and a localized tuning method for tuning the electrode layer of a layered heater structure with high precision is provided. The localized tuning method tunes the electrode layer to its proper local resistance to minimize temperature offsets on the heater surface and thus provide a desired thermal profile that is in marked contrast to conventional, non-localized resistance tuning approaches based on thickness trimming practices, such as grinding or blasting, or resistivity adjustment, such as local heat treatment.