Patents Represented by Attorney Joseph Petrokaiti

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  • CMOS SiGe channel pFET and Si channel nFET devices with minimal STI recess
    Patent number: 8053301
    Abstract: Silicon germanium (SiGe) is epitaxially grown on a silicon channel above nFET and pFET regions of a substrate. SiGe is removed above the nFET regions. A device includes a silicon channel above the nFET regions and a SiGe channel above the pFET regions.
    Type: Grant
    Filed: March 30, 2009
    Date of Patent: November 8, 2011
    Assignee: International Business Machines Corporation
    Inventors: Daniel J. Jaeger, Michael V. Aquilino, Christopher V. Baiocco