Abstract: A II-VI semiconductor device includes a stack of II-VI semiconductor layers electrically connected to a top electrical contact. A GaAs substrate is provided which supports the stack of II-VI semiconductor layers and is positioned opposite to the top electrical contacts. A BeTe buffer layer is provided between the GaAs substrate and the stack of II-VI semiconductor layers. The BeTe buffer layer reduces stacking fault defects at the interface between the GaAs substrate and the stack of II-VI semiconductor layers.

Abstract: A device in a process control system includes an electrical element which has a resistance. Self heating circuitry coupled to the element provides a self heating signal related to the resistance of the element. Diagnostic circuitry provides a diagnostic output as a function of the self heating signal output.

Abstract: A remote diaphragm assembly, for use in the process control industry, is disclosed which can be quickly assembled and disassembled by press-fitting a diaphragm housing and an adapter housing together. The diaphragm housing includes a flexible diaphragm and a first retention ring receiving portion. The adapter housing is configured to place the flexible diaphragm in fluid communication with a process fluid in a vessel and includes a second retention ring receiving portion. The first and second retention ring receiving portions align to form a retention ring cavity. A retention ring is positioned within the retention ring cavity such that portions of the retention ring occupy the first and second retention ring receiving portions to couple the diaphragm housing to the adapter housing. Also disclosed is a method for assembling the above-described remote diaphragm assembly.

Abstract: A II-VI semiconductor device includes a stack of semiconductor layers. An ohmic contact is provided that electrically couples to the stack. The ohmic contact has an oxidation rate when exposed to an oxidizing substance. A passivation capping layer overlies the ohmic contact and has an oxidation rate that is less than the oxidation rate of the ohmic contact.

Abstract: An improved interface is established between a field management system and a calibrator for calibrating a process device to provide increased efficiency. The interface includes a communication module for communicating with the calibrator in accordance with a calibrator-specific protocol and a translation module for translating calibration information between an FMS-compatible format and a common data format. The interface allowing calibration information to flow between the calibrator and the FMS.

Abstract: A II-VI semiconductor device includes a stack of II-VI semiconductor layers electrically connected to a top electrical contact. A GaAs substrate is provided which supports the stack of II-VI semiconductor layers and is positioned opposite to the top electrical contacts. A BeTe buffer layer is provided between the GaAs substrate and the stack of II-VI semiconductor layers. The BeTe buffer layer reduces stacking fault defects at the interface between the GaAs substrate and the stack of II-VI semiconductor layers.

Abstract: A II-VI semiconductor device is fabricated using a selective etchant in the form of aqueous solution of HX where X is Cl or Br. The II-VI semiconductor device is composed of a number of layers. Selective etching can be enabled by introducing Mg into one of the semiconductor layers. The resultant device may include a semiconductor layer containing Mg.

Abstract: A II-VI semiconductor light emitting device includes a II-VI semiconductor light emitting region and a II-VI semiconductor waveguide layer. A light absorbing layer is provided near the II-VI semiconductor waveguide layer, outside of the active region. The light absorbing layer absorbs extraneous radiation thereby reducing dark line defects (DLDs).

Abstract: A II-VI semiconductor device is fabricated using a selective etchant in the form of aqueous solution of HX where X is Cl or Br. The II-VI semiconductor device is composed of a number of layers. Selective etching can be enabled by introducing Mg into one of the semiconductor layers. The resultant device may include a semiconductor layer containing Mg.

Abstract: A II-VI compound semiconductor laser diode includes a plurality of II-VI semiconductor layers forming a pn junction supported by a single crystal GaAs semiconductor substrate. The layers formed in the pn junction include a first cladding layer of a first conductivity type, a second cladding layer of a second conductivity type, and at least a first guiding layer between the first and second cladding layers. A quantum well active layer is positioned within the pn junction. Electrical energy is coupled to the laser diode by first and second electrodes. Various layers in the laser diode are formed using Be.

Abstract: A II-VI semiconductor device includes a stack of semiconductor layers. An ohmic contact is provided that electrically couples to the stack. The ohmic contact has an oxidation rate when exposed to an oxidizing substance. A passivation capping layer overlies the ohmic contact and has an oxidation rate that is less than the oxidation rate of the ohmic contact.

Abstract: An air data module connector and filter that provides a shielded housing 12 for supporting a standard air data signal carrying cable connector 22 on an exterior wall thereof, and having an access opening that has a cover plate 34 on an opposite wall from the mounting wall for the connector. The cover plate 34 has a plurality of tubular filters 36 installed therein with pins 40 extending into the housing toward the cable connector. A flexible circuit board 44 has opposite ends which fit on the pins of the connector 23, and the pins 40 of the filters 36 extending through the cover plate, respectively, so that the flexible circuit board 44 can be installed on the cable connector 23 and on the pins 40 for the filters on the cover plate 34 prior to assembly of the cable connector and the cover plate 34 in the housing 12.