Abstract: A method of passivating an edge-emitting semiconductor diode laser and the resultant product. Laser bars are cleaved in air from a wafer containing multiple laser bars. The bars are placed into a vacuum processing chamber in which two steps are performed without breaking vacuum. The first step includes cleaning the facets including removing the native oxide by, for example, a low-energy ion beam or by an electron cyclotron resonance (EAR) plasma containing hydrogen and possibly argon or xenon with the bars being negatively biased. The second step includes coating the cleaned facets with a thin passivation layer of hydrogenated amorphous silicon (a-Si:H), whereby the facets are coating by the passivation layer without an intervening oxide. A low oxygen partial pressure of no more than 10−8 Torr is maintained between the cleaning and deposition, both of which preferably are done in the same chamber.

Abstract: An electro-optic polarizor, grating assembly or cell (10) includes a first glass plate (12) to form the foundation of the cell. A first alignment surfactant (14) is coated on one surface of the first glass plate (12). Similarly, a second alignment surfactant (24) is coated on one surface of a second glass plate (22). A transparent interdigitated electrode pattern (30) is disposed between the second glass plate (22) and the second alignment surfactant (24). A thin film of homeotropically aligned nematic liquid crystal (40) is sandwiched between the first and second alignment surfactants (14) and (24) for applying a lateral electric field caused by the control voltage or signal (50) across the liquid crystal (40) to alter the optical properties of the liquid crystal (40) such that a polarization depended grating (60) is induced by the lateral electric field (50).