Patents Represented by Attorney Justin K. Brask

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  • Method for making a semiconductor device having a high-k gate dielectric and a titanium carbide gate electrode
    Patent number: 7064066
    Abstract: A method for making a titanium carbide layer is described. That method comprises alternately introducing a carbon containing precursor and a titanium containing precursor into a chemical vapor deposition reactor, while a substrate is maintained at a selected temperature. The reactor is operated for a sufficient time, and pulse times are selected for the carbon containing precursor and the titanium containing precursor, to form a titanium carbide layer of a desired thickness and workfunction on the substrate.
    Type: Grant
    Filed: December 7, 2004
    Date of Patent: June 20, 2006
    Assignee: Intel Corporation
    Inventors: Matthew V. Metz, Suman Datta, Mark L. Doczy, Jack Kavalieros, Justin K. Brask, Robert S. Chau