Abstract: A field emission device (100) includes an electroplated structure (122) and an electron emitter (118). Electroplated structure (122) includes a base (124), which is disposed proximate to electron emitter (118) and is made from the same material from which electron emitter (118) is made. Electroplated structure (122) further includes an electroplating electrode (126), which is disposed on base (124), and an electroplated layer (128), which is disposed on electroplating electrode (126). A method for fabricating field emission device (100) includes a step of forming electron emitter (118) and further includes a step of forming base (124) during the step of forming electron emitter (118). The method further includes a step of completely encapsulating electron emitter (118) prior to a step of forming electroplated layer (128).

Abstract: An amorphous multi-layered structure (100, 200) is formed by a method including the steps of: i) positioning a deposition substrate (101) in a physical vapor deposition apparatus, (300, 400, 500) ii) ionizing a precursor of a multi-phase material within the physical vapor deposition apparatus (300, 400, 500) iv) modulating the total ion impinging energy of the ions to deposit layers having predetermined properties corresponding to the total ion impinging energy values.

Abstract: A field emission display (400) includes a cathode plate (410), an anode plate (430), and a mechanical support/getter assembly (300) being disposed between the cathode plate (410) and the anode plate (430). The mechanical support/getter assembly (300) includes a unitary spacer-frame assembly (310) made from a photosensitive glass. A method for fabricating the mechanical support/getter assembly (300) includes the steps of: selectively exposing inter-spacer regions (110) and a getter frame region (120) of a layer (100) of the photosensitive glass to UV radiation, heating the layer (100) to crystallize the UV-exposed regions, and removing the crystallized inter-spacer regions (110) and partially removing the crystallized getter frame regions by contacting the layer (100) with an acid, thereby forming spacer ribs (314) and a getter land (322). The method further includes providing a getter frame (320) on the spacer land (322).

Abstract: A sealing composition (134) includes about 85-95 wt. % glass frit, about 2-8 wt. % butyl carbitol acetate, about 2-8 wt. % alpha-terpineol, about 0.05-0.8 wt. % ester alcohol, and about 0.05-0.8 wt. % low molecular weight ethyl cellulose binder. A method for fabricating an apparatus (100) includes the steps of applying the sealing composition (134) to a portion (132) of the apparatus (100), removing the butyl carbitol acetate, the alpha-terpineol, and the ester alcohol, removing the binder, and heating the glass frit to a sealing temperature of the glass frit.

Abstract: A field emission device (100, 200) includes an anode (190); a substrate (110); a plurality of spaced apart cathodes (120); a dielectric layer (124) disposed on the cathodes (120); a plurality of spacer pads (130, 230) disposed on the substrate (110) between adjacent cathodes (120) and including a spacer contact layer (142, 185) that defines the surfaces of the spacer pads (130, 230); a spacer (150) having a first edge (157), a second edge (155), and a conductive layer (152) disposed on the second edge (155), the first edge (157) contacting the anode (190), the conductive layer (152) contacting the spacer contact layer (142, 185) at the spacer pads (130, 230); and an electron emitter (170) disposed within the dielectric layer (124) and spaced apart from the second edge (155) of the spacer (150).

Abstract: An edge emission FED (100) includes a supporting substrate (110); a cathode (120) disposed on the supporting substrate (110); a ballast layer (130) disposed on the cathode (120); an emissive layer (140) disposed on the ballast layer (130) and defining an emissive edge (183); a field shaper layer (150) disposed on the emissive layer (140); a dielectric layer (160) disposed on the field shaper layer (150); a gate extraction electrode (170) disposed on the dielectric layer (160); an emission well (180) defined by the ballast layer (130), the emissive edge (183), the field shaper layer (150), the dielectric layer (160), and the gate extraction electrode (170); and an anode plate (188) opposing the gate extraction electrode (170).

Abstract: A field emission device (100) includes a supporting substrate (110) having a major surface; a cathode (111) disposed on the major surface of the supporting substrate (110); a dielectric layer (112) disposed on the cathode (111); a gate extraction electrode (114) disposed on the dielectric layer (112); the cathode (111), the dielectric layer (112), and the gate extraction electrode (114) defining a spacer well (132); an anode plate (104) opposing the gate extraction electrode (114); a spacer (106) extending between the cathode (111) at the spacer well (132) and the anode plate (104); a first spacer shield (108) disposed within the spacer well (132) and surrounding the spacer (106); and a second spacer shield (108) affixed to the anode plate (104) and surrounding the spacer (106).