Abstract: A dielectric oxide film is formed on the surface of a valve metal plate formed of aluminum and a conductive polymer layer is provided so as to cover the valve metal plate and the dielectric oxide film. The conductive polymer layer is formed of polyaniline having para-toluenesulfonic acid as a dopant. A conductive carbon paste layer and a silver paste layer are provided at the outer side of the conductive polymer layer and a metal plate, comprising a copper foil, is overlapped onto the silver paste layer. Anode lead terminals are connected to the ends of the valve metal plate and the respective end parts of the metal plate are arranged as cathode lead terminals. A shield strip line device, which is low in impedance, especially in high-frequency ranges of 100 MHz or more, and is favorably adapted to high speed and high frequencies, mainly for use as a bypass device for a noise filter or as a decoupling device, is thus obtained.

Abstract: One object of the present invention is to suppress a threshold voltage of at least an n-channel MISFET using a nitride of a high melting point metal at it's gate electrode. In order to achieve the object, a gate electrode 109 of a p-channel MISFET is constituted of a titanium nitride film 106 and a tungsten film 107 formed on the film 106 and a gate electrode 110a of an n-channel MISFET is constituted of a titanium nitride film 106a and a tungsten film 107 formed on the film 106a. The titanium nitride film 106a is formed by nitrogen ion implantation in the titanium nitride film 106 to decrease the work function.

Abstract: A microwave amplifier and more particularly to a microwave amplifier configured as a Doherty amplifier. The amplifier includes a carrier amplifier, a peak amplifier, a Lange coupler at the input of the amplifiers and quarter wave amplifier at the output of the amplifiers. In order to further increase the efficiency, the Doherty amplifier is formed from HEMT/HBT technology to take advantage of the low-noise performance of HEMTs and the high-linearity of HBTs to form a relatively efficient amplifier that functions as a low-noise amplifier at low power levels and automatically switches to high-power amplification for relatively high-impact RF power levels.