Patents Represented by Attorney, Agent or Law Firm Keating & Bemmett,LLP
  • Patent number: 6617183
    Abstract: A method for forming a p-type semiconductor film comprises the steps of: providing on a substrate a group II-VI compound semiconductor film which is doped with a p-type impurity and comprises either MgXZn1−XO (0≦X≦1) or CdXZn1−XO (0≦X≦1) and activating the p-type impurity by annealing the doped semiconductor film.
    Type: Grant
    Filed: April 19, 2001
    Date of Patent: September 9, 2003
    Assignee: Murata Manufacturing Co., Ltd.
    Inventors: Michio Kadota, Yasuhiro Negoro, Yoshinori Miura