Patents Represented by Attorney Keith B. Jackson

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  • High energy ESD structure and method
    Patent number: 7098509
    Abstract: In one embodiment, a concentric ring ESD structure includes a first p-type region and a second p-type region are formed in a layer of semiconductor material. The two p-type regions are coupled together with a floating n-type buried layer. The first and second p-type regions form a back-to-back diode structure with the floating n-type buried layer. A pair of shorted n-type and p-type contact regions is formed in each of the first and second regions. An isolation region is formed between the first and second p-type regions.
    Type: Grant
    Filed: January 2, 2004
    Date of Patent: August 29, 2006
    Assignee: Semiconductor Components Industries, L.L.C.
    Inventors: Peter J. Zdebel, Diann Michelle Dow