Patents Represented by Attorney Kenneth Richardson
  • Patent number: 4780372
    Abstract: A protective diffusion barrier for metalized mirror structures is provided by a layer or coating of silicon nitride which is a very dense, transparent, dielectric material that is impervious to water, alkali, and other impurities and corrosive substances that typically attack the metal layers of mirrors and cause degradation of the mirrors' reflectivity. The silicon nitride layer can be deposited on the substrate before metal deposition to stabilize the metal/substrate interface, and it can be deposited over the metal to encapsulate it and protect the metal from corrosion or other degradation. Mirrors coated with silicon nitride according to this invention can also be used as front surface mirrors.
    Type: Grant
    Filed: June 4, 1986
    Date of Patent: October 25, 1988
    Assignee: The United States of America as represented by the United States Department of Energy
    Inventors: C. Edwin Tracy, David K. Benson
  • Patent number: 4764627
    Abstract: A process of producing furan and derivatives thereof is disclosed. The process includes generating furfural aldehyde vapors and then passing those vapors over a zeolite catalyst at a temperature and for a residence time effective to decarbonylate the furfural aldehydes to form furans and derivatives thereof. The resultant furan vapors and derivatives are then separated. In a preferred form, the furfural aldehyde vapors are generated during the process of converting biomass materials to liquid and gaseous fuels.
    Type: Grant
    Filed: April 6, 1987
    Date of Patent: August 16, 1988
    Assignee: The United States of America as represented by the United States Department of Energy
    Inventors: James P. Diebold, Robert J. Evans
  • Patent number: 4761302
    Abstract: A method is disclosed for producing fluorine-containing amorphous semiconductor material, preferably comprising amorphous silicon. The method includes depositing amorphous thin-film material onto a substrate while introducing xenon fluoride during the film deposition process.
    Type: Grant
    Filed: May 1, 1987
    Date of Patent: August 2, 1988
    Assignee: The United States Department of Energy
    Inventor: Raoul B. Weil