Patents Represented by Law Firm Kerkman, Stowell, Kondracki & Clarke
  • Semiconductor substrate having a superconducting thin film
    Patent number: 5401715
    Abstract: A semiconductor substrate having a silicon substrate and a superconducting thin film layer composed of compound oxide such as Ln.sub.1 Ba.sub.2 Cu.sub.3 O.sub.7-.delta. (Ln is lanthanide) and stratified on the silicon substrate, characterized in that an intermediate semiconductor layer composed of compound semiconductor material such as GaAs is interposed between the silicon substrate and the superconducting thin film layer.
    Type: Grant
    Filed: November 6, 1992
    Date of Patent: March 28, 1995
    Assignee: Sumitomo Electric Industries, Ltd.
    Inventors: Hideo Itozaki, Keizo Harada, Naoji Fujimori, Shuji Yazu, Tetsuji Jodai