Patents Represented by Attorney Kevin B. Johnson

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  • Semiconductor device having trench structures and method
    Patent number: 7420258
    Abstract: In one embodiment, a pair of sidewall passivated trench contacts is formed in a substrate to provide electrical contact to a sub-surface feature. A doped region is diffused between the pair of sidewall passivated trenches to provide low resistance contacts.
    Type: Grant
    Filed: June 27, 2007
    Date of Patent: September 2, 2008
    Assignee: Semiconductor Components Industries, LLC
    Inventors: Gordon M. Grivna, Peter J. Zdebel