Patents Represented by Attorney, Agent or Law Firm Kevin I. Daffer
  • Patent number: 6811831
    Abstract: A method is provided which includes creating a plasma from a gas mixture including diatomic nitrogen gas and a gas comprising silicon. In addition, the method includes exposing a microelectronic topography to the plasma to form a silicon nitride layer thereon. In some cases, the method may include forming the silicon nitride layer at a temperature less than approximately 300° C. Furthermore, the method may include subsequently processing the microelectronic topography at a temperature greater than or equal to approximately 250° C. such that a stress change of less than approximately 1.0×1010 dynes/cm2 occurs within the silicon nitride layer. In addition, a microelectronic topography is provided which has a silicon nitride layer with a concentration of diatomic hydrogen that is at least one order of magnitude lower than a concentration of diatomic hydrogen within a silicon nitride layer formed from a plasma generated from ammonia.
    Type: Grant
    Filed: November 20, 2002
    Date of Patent: November 2, 2004
    Assignee: Silicon Magnetic Systems
    Inventors: William C. Koutny, Helen L. Chung
  • Patent number: 6803318
    Abstract: A method is provided for forming a self aligned contact by etching an opening through a low doped or undoped dielectric layer such as phosphosilicate glass. The dielectric layer may be formed on a semiconductor layer which may include regions of monocrystalline silicon and undoped silicon dioxide. A first portion of a dielectric layer may be etched with a first etch chemistry, and a second portion of the dielectric layer may be etched with a second etch chemistry. The first etch chemistry may be substantially different than the second etch chemistry. In this manner, the first etch chemistry may have a substantially different etch selectivity than the second etch chemistry. For example, in an embodiment, the first etch chemistry may be selective to silicon nitride, and the second etch chemistry may be selective to undoped silicon oxide.
    Type: Grant
    Filed: September 14, 2000
    Date of Patent: October 12, 2004
    Assignee: Cypress Semiconductor Corp.
    Inventors: Jianmin Qiao, Sam Geha, Mehran G. Sedigh
  • Patent number: 6587462
    Abstract: An architecture, system and method are provided for transparently mapping addresses across multiple addressing domains and/or protocols. A destination of a packet can therefore be transferred from a first addressing domain within one network to a second addressing domain within another network, without inserting knowledge into the packet of the relationship between the two separate and independent domains. Transmission modules within one network can be identified with unique identification numbers or addresses assigned during configuration of those modules. The identification numbers assigned internal to the network can be mapped and placed upon the packet as the packet enters the network. Mapping, however, is minimal, knowing that relatively few external devices are connected to select internal devices and/or modules. The packet can then be mapped into the network, where it is then transferred across the network whereupon it is mapped to another network or termination device external to the network.
    Type: Grant
    Filed: February 16, 2001
    Date of Patent: July 1, 2003
    Assignee: Dunti Corporation
    Inventor: Rupaka Mahalingaiah