Patents Represented by Attorney, Agent or Law Firm Kevin L. Draffer
  • Interlevel dielectric with air gaps to lessen capacitive coupling
    Patent number: 6208015
    Abstract: A reduced permittivity interlevel dielectric in a semiconductor device arranged between two levels of interconnect. The dielectric comprises a first dielectric layer preferably from a silane source deposited on a first level interconnect to form air gaps at midpoints between adjacent first interconnect structures, a second dielectric containing air gap trenches at spaced intervals across the second dielectric, and a third dielectric formed upon said second dielectric. A second interconnect level is formed on the third dielectric.
    Type: Grant
    Filed: January 27, 1998
    Date of Patent: March 27, 2001
    Assignee: Advanced Micro Devices, Inc.
    Inventors: Basab Bandyopadhyay, H. Jim Fulford, Jr., Robert Dawson, Fred N. Hause, Mark W. Michael, William S. Brennan