Patents Represented by Law Firm Kidd & Booth
  • Patent number: 5871390
    Abstract: The present invention describes an apparatus and method for aligning a pad/belt on a roller for use in chemical mechanical polishing using linear planarization. The present invention comprises an alignment sensor that senses the alignment of the pad/belt. The present invention additionally comprises a tensioner that tensions the pad/belt on the roller. And, a controller that controls the alignment of the pad/belt on the roller by controlling the tensioner.
    Type: Grant
    Filed: February 6, 1997
    Date of Patent: February 16, 1999
    Assignee: Lam Research Corporation
    Inventors: Anil K. Pant, Douglas W. Young, Joseph R. Breivogel, Konstantin Volodarski, Leon Volfovski
  • Patent number: 5847691
    Abstract: Broadcast standard format video signals such as that adopted by the National Television Standards Committee (NTSC) or the European standard format of Phase Alternating Line (PAL) and some broadcast "compatible" video signals are used as inputs to a microkeyer to synchronize a microcomputer's display in a manner that allows full and complete merging of the two signals (in particular, a computer's DC restored video signal with a DC restored external video signal) in the broadcast video domain by, for example, additive (mixing) or non-additive (keying) processes. The required synchronization (with horizontal and vertical drive components) in turn makes possible incorporation in any video space a variety of computer generated visuals such as illustrative graphics, titling and any other data displayed in the video.
    Type: Grant
    Filed: June 6, 1995
    Date of Patent: December 8, 1998
    Inventor: Henry B. Mistrot
  • Patent number: 5834931
    Abstract: An RF sensor having a novel current sensing probe and a voltage sensing probe to measure voltage and current. The current sensor is disposed in a transmission line to link all of the flux generated by the flowing current in order to obtain an accurate measurement. The voltage sensor is a flat plate which operates as a capacitive plate to sense voltage on a center conductor of the transmission line, in which the measured voltage is obtained across a resistance leg of a R-C differentiator circuit formed by the characteristic impedance of a connecting transmission line and a capacitance of the plate, which is positioned proximal to the center conductor.
    Type: Grant
    Filed: October 31, 1996
    Date of Patent: November 10, 1998
    Assignee: Sematech, Inc.
    Inventors: James A. Moore, Dennis O. Sparks
  • Patent number: 5770982
    Abstract: The present invention discloses a saturable reactor and a method for decoupling the interwinding capacitance from the frequency limitations of the reactor so that the equivalent electrical circuit of the saturable reactor comprises a variable inductor. The saturable reactor comprises a plurality of physically symmetrical magnetic cores with closed loop magnetic paths and a novel method of wiring a control winding and a RF winding. The present invention additionally discloses a matching network and method for matching the impedances of a RF generator to a load. The matching network comprises a matching transformer and a saturable reactor.
    Type: Grant
    Filed: October 29, 1996
    Date of Patent: June 23, 1998
    Assignee: Sematech, Inc.
    Inventor: James A. Moore
  • Patent number: 5722877
    Abstract: A platen ring for use with a platen on a linear polisher, in which the platen ring is used to reduce fluctuation of the belt/pad assembly as it encounters the platen. The platen ring is disposed around the platen so that a fluctuation of the belt/pad assembly is dampened before the belt/pad assembly engages the platen. Reduction of the belt/pad fluctuation ensures a reduction in the within-wafer non-uniformity and provides for a more uniform polishing rate across the surface of the wafer.
    Type: Grant
    Filed: October 11, 1996
    Date of Patent: March 3, 1998
    Assignee: Lam Research Corporation
    Inventors: Anthony S. Meyer, Thomas G. Mallon, Bradley Withers, Douglas W. Young
  • Patent number: 5674787
    Abstract: A method or utilizing electroless copper deposition to selectively form encapsulated copper plugs to connect conductive regions on a semiconductor. A via opening in an inter-level dielectric (ILD) provides a path for connecting two conductive regions separated by the ILD. Once the underlying metal layer is exposed by the via opening, a SiN or SiON dielectric encapsulation layer is formed along the sidewalls of the via. Then, a contact displacement technique is used to form a thin activation layer of copper on a barrier metal, such as TiN, which is present as a covering layer on the underlying metal layer. After the contact displacement of copper on the barrier layer at the bottom of the via, an electroless copper deposition technique is then used to auto-catalytically deposit copper in the via. The electroless copper deposition continues until the via is almost filled, but leaving sufficient room at the top in order to form an upper encapsulation layer.
    Type: Grant
    Filed: January 16, 1996
    Date of Patent: October 7, 1997
    Assignee: Sematech, Inc.
    Inventors: Bin Zhao, Prahalad K. Vasudev, Valery M. Dubin, Yosef Shacham-Diamand, Chiu H. Ting
  • Patent number: 5660706
    Abstract: A technique for utilizing an electric field to initiate electroless deposition of a material to form layers and/or structures on a semiconductor wafer. The wafer is disposed between a positive electrode and a negative electrode and disposed so that its deposition surface faces the positive electrode. A conductive surface on the wafer is then subjected to an electroless copper deposition solution. When copper is the conductive material being deposited, positive copper ions in the solution are repelled by the positive electrode and attracted by the negatively charged wafer surface. Once physical contact is made, the copper ions dissipate their charges by accepting electrons from the conductive surface, thereby forming copper atoms on the surface. The deposited copper have the catalytic properties so that when a reductant in the solution is absorbed at the copper sites and then oxidized, additional electrons are released into the conductive surface.
    Type: Grant
    Filed: July 30, 1996
    Date of Patent: August 26, 1997
    Assignee: Sematech, Inc.
    Inventors: Bin Zhao, Prahalad K. Vasudev