Abstract: Disclosed is a method, system, program, and data structure for installing a program onto a computer including an operating system. Dependency objects indicate a dependent component on which the program to install depends. The program processes the dependency objects before installing the program and determines an operating system command that is capable of determining whether the dependent component indicated in the dependency object is installed in the computer. The program then executes the operating system command to determine whether the dependent components indicated in the dependency objects are installed in the computer. An indication is made as to the dependent components that are not installed after determining that dependent components are not installed.

Abstract: In certain embodiments a plasma is supplied from a plasma chamber 10 into a reaction chamber 18 of a plasma CVD apparatus. An electrode 22 is disposed in the reaction chamber 18. A semiconductor wafer on which a thin film is to be formed is placed on the electrode 22. A radio-frequency wave is generated by a radio-frequency wave generator 28 and supplied to the electrode 22 via a radio-frequency matching network 30, a blocking capacitor 32, and an RF probe 34 so as to control the plasma in the plasma chamber 10. A judgment device 38 is electrically connected to the RF probe 34. The voltage and current are be measured by the RF probe and the judgment device 38 is used to judge the state of the plasma in the plasma chamber 10.

Abstract: Disclosed is a method, system, and article of manufacture for processing modified meta data for data recovery operations. The meta data provides information on user data maintained in a storage device. The system determines whether meta data tracks maintained in a cache were modified and indicates in a non-volatile memory that the determined meta data tracks were modified. Data recovery operations may be initiated as a result of a system failure, such as a warmstart or coldstart recovery. During such data recovery operations, the system processes the non-volatile memory and the indications of modified meta data tracks therein to rebuild lost meta data tracks in the cache.

Abstract: Provided is a system, method, and program for managing read and write requests to a cache to process enqueue and dequeue operations for a queue. Upon receiving a data access request to a data block in a memory, a determination is made as to whether any data block is maintained in a cache line entry in the cache. If so, a cache line entry maintaining the data block is accessed to perform the data access request. A first flag, such as a read flag, associated with the accessed cache line entry is set “on” if the data access request is a read request. Further, if the data access request is a write request to update the data block in the memory, a second flag, such as a write flag, associated with the cache line entry including the data to update may be set “on”. The update data may be data to be enqueued onto a queue, where the queue may be, but is not limited to, a circular buffer in the memory having a head and tail pointer.

Abstract: Embodiments relate to reduced VOC hair spray compositions. One composition includes a concentrate and propellant. The concentrate includes 25-45 weight percent alcohol, 30-50 weight percent methyl acetate, 5-15 weight percent resin, 0.2-1.3 weight percent neutralizer, and 5-25 weight percent water. The propellant comprises dimethyl ether. The composition includes 50 to 90 weight percent concentrate and 10 to 50 weight percent propellant.

Abstract: Embodiments include a method for manufacturing a semiconductor device including a plurality of non-volatile memory transistors that include field effect transistors operated at a plurality of different voltage levels. The method includes the following steps: (a) forming a gate insulation layer 26 and a floating gate 40 of a non-volatile memory transistor 400 on a silicon substrate 10 in a memory region 4000; (b) forming, on the wafer, a first silicon oxide layer 50aL by a thermal oxidation method and a second silicon oxide layer 50bL by a CVD method; (c) removing the first and the second silicon oxide layers in the first transistor region; and (d) forming a silicon oxide layer 20L on the wafer by a thermal oxidation method. The silicon oxide layer formed in step (d) compose at least a portion of a gate insulation layer of a first voltage-type transistor and a gate insulation layer of a second voltage-type transistor.

Abstract: Embodiments include a liquid colorant composition having an acrylates/octylacrylamide copolymer, a cellulose material, alcohol and a colorant. The cellulose material may be hydroxypropylcellulose. Isostearyl alcohol and silica may be included in the composition to enhance properties such as the spreadability and feel of the composition on the lips. Additional additives such as fragrance and botanical extracts may also be added. Such compositions can be easily applied to the lips and offer long wear characteristics.

Abstract: Disclosed is a semiconductor structure and manufacturing process for making an integrated FET and photodetector optical receiver on a semiconductor substrate. A FET is formed by forming at least one p region in a p-well of the substrate and forming at least one n region in the p-well of the substrate. A p-i-n photodetector is formed in the substrate by forming at least one p region in an absorption region of the substrate when forming the at least one p region in the p well of the FET and forming at least one n region in the absorption region of the substrate when forming the at least one n region in the p-well of the FET.

Abstract: Disclosed is a system, method, and program for determining the configuration of a computer system having a planar board, a planar bus, and attached planar devices. A read operation is performed on planar configuration memory indicating addresses for each planar device capable of being attached to the planar board. A read command is then sent to the address of each planar device indicated in the planar configuration memory to determine if each planar device is available. A configuration memory for each available planar device is read to determine configuration information and if there are addresses of attached devices accessible through the planar device. A read command is then sent to the address of each attached device indicated in the configuration memory of the planar device to determine configuration information for each attached device and if there are further attached devices accessible through the attached device.

Abstract: Provided are a system, method, program, and data structure for processing a request for data in a first format that is superimposed on blocks of data stored in a second format in a storage device. A data structure for a storage unit in the first format including the requested data is accessed. There is one data structure for each storage unit in the first format being accessed. Further, at least one cache page storing blocks of data in the second format is needed to store one storage unit in the first format. A determination is made of one or more storage blocks in the second format that include the requested data. A determination is also made as to whether the storage unit data structure includes a pointer to a control block for a cache page that would include the determined storage blocks in the second format.

Abstract: Certain embodiments provide a manufacturing method for a semiconductor device, in which an organic antireflection film can be etched while a resist layer maintains dimensions thereof. The method includes forming an oxide layer 24 on a p-type silicon substrate 10, and forming a polysilicon layer 26 on the oxide layer 24. An organic antireflection film 30 is formed on the polysilicon layer 26, and a resist layer R having a predetermined pattern is formed on a surface of the organic antireflection film 30. The method as includes etching the organic antireflection film 30 by using the resist layer R, in which an etching gas includes at least one of an oxygen-based gas and a chlorine-based gas, and forming a gate electrode by etching the polysilicon layer 26 with a predetermined pattern.

Abstract: Embodiments include devices and methods for sputtering material onto a workpiece in a chamber which includes a plasma generation area and a target. A coil is positioned to inductively couple energy into the plasma generation area to generate a plasma. A body is positioned between the workpiece and the target to prevent an amount of target material from being sputtered onto the workpiece. The body prevents an amount of target material from being sputtered onto the workpiece. The body may act as a dark space shield and inhibit plasma formation between the body and the target. The body may also act as a physical shield to block sputtered material from accumulating on the workpiece.

Abstract: Embodiments include a method for fabricating a nanograined component from a nanograined powder composition. A compact is formed from the nanograined powder composition and sufficient heat is applied to the compact to generate at least one exothermic reaction while the compact is at a temperature lower than its eutectic temperature. Pressure is applied to the powder compact during the heating operation to consolidate the powder compact. The application of heat and pressure are controlled to inhibit grain growth and form a component having a nanograined microstructure that is at least 98 percent dense at a temperature lower than the eutectic temperature.

Abstract: A semiconductor device 100 has a substrate 11 including a high breakdown voltage transistor region where transistors with high breakdown voltage and high dielectric strength Qn and Qp are formed and a low breakdown voltage transistor region where transistors with low breakdown voltage and low dielectric strength are formed. The transistors with high voltage breakdown and high dielectric strength Qn and Qp and the transistors with low voltage breakdown and low dielectric strength operate at different voltages. In the high breakdown voltage transistor region, the semiconductor device has metal wiring layers 19a and 19b that are fed with a high potential. The metal wiring layers 19a and 19b are provided over the transistors with high voltage breakdown and high dielectric strength Qn and Qp through a first interlayer dielectric film 16 and a second interlayer dielectric film 17. An element isolation dielectric region 14 is provided over the substrate 11.

Abstract: In a method for manufacturing a semiconductor device in which wiring layers are formed by a damascene method, certain embodiment relate to a manufacturing methods and semiconductor devices, in which a bonding pad section having a multiple-layered structure can be formed by a simple method without increasing the number of process steps.

Abstract: Disclosed is a system, method, and program for joining a multi-column table and at least two satellite tables. Each satellite table is comprised of multiple rows and at least one join column and each multi-column table is comprised of multiple rows and join columns corresponding to the join columns in the satellite tables. A query including predicates is received. A join predicate column comprises the satellite table and multi-column table join column to which at least one query predicate applies. A determination is then made as to whether there is at least one index on the multi-column table including at least one column for one join predicate column. One index is selected. The ordering of the join predicate columns in the selected index is used to determine the join order of the satellite tables and the multi-column table. The satellite tables and multi-column tables are then joined in the determined join order.

Abstract: Disclosed are methods and systems for processing a file request, such as a URL request for a web page. A computer system, such as a proxy server, receives a request from a client computer for a file at a file path location, such as a Universe Resource Locator (URL), in a network. A request attribute associated with the request from the processing system is determined. Rule information indicating at least one substitute file, e.g., web page, and an attribute associated with each substitute file is processed to determine whether the determined request attribute matches an attribute associated with one substitute file. The substitute file associated with the attribute that matches the request attribute is retrieved after determining that the request attribute matches the attribute associated with the substitute file. The retrieved substitute file is then returned to the processing system via the network.

Abstract: Disclosed is a method, system, and program for performing a join operation on a multi-column table and at least two satellite tables having a join condition. Each satellite table is comprised of multiple rows and at least one join column. The multi-column table is comprised of multiple rows and at least one column corresponding to the join column in each satellite table. A join operation is performed on the rows of the satellite tables to generate concatenated rows of the satellite tables. One of the concatenated rows is joined to the multi-column table and a returned entry from the multi-column table is received. A determination is then made as to whether the returned entry matches the search criteria. If so, a determination is made as to whether one of the satellite tables has duplicates of values in the join column of the returned matching entry or the multi-column table has duplicate entries in the join columns.

Abstract: A system is provided for processing a print job. A processing unit, such as a server, receives a plurality of print job files. Each print job file is associated with a data file. The print job files are maintained in a queue of print job files. The processing unit selects a print job file in the queue and processes a data structure indicating a plurality of transform processes and the availability of each indicated transform process to process a data file. The processing unit selects an available transform process, such as a RIP process, in response to processing the data structure and indicates in the data structure that the selected transform process is unavailable. The transform process processes the data file associated with the selected print job to generate a printer supported output data stream.

Abstract: A sputtering coil for a plasma chamber in a semiconductor fabrication system is provided. The sputtering coil couples energy into a plasma and also provides a source of sputtering material to be sputtered onto a workpiece from the coil to supplement material being sputtered from a target onto the workpiece. Alternatively a plurality of coils may be provided, one primarily for coupling energy into the plasma and the other primarily for providing a supplemental source of sputtering material to be sputtered on the workpiece.