Patents Represented by Attorney Kris V. Strikrishnan

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  • Method of making silicon on insulator buried plate trench capacitor
    Patent number: 5770484
    Abstract: A method of forming a DRAM storage cell with a trench capacitor in an SOI substrate is taught. The method involves forming an field effect transistor (FET) consisting of a source, drain, channel regions in a device layer, a gate oxide layer on the surface of the device layer and a gate electrode over the channel region.
    Type: Grant
    Filed: December 13, 1996
    Date of Patent: June 23, 1998
    Assignee: International Business Machines Corporation
    Inventor: Richard Leo Kleinhenz