Patents Represented by Attorney kv Robert Wallace
  • Patent number: 5948168
    Abstract: A plasma reactor has plural dielectric gas injection tubes extending from a gas injection source and through a microwave guide and into the top of the reactor chamber. The semiconductor wafer rests near the bottom of the chamber on a wafer pedestal connected to a bias RF power source which is controlled independently of the microwave source coupled to the microwave guide. The microwaves from the waveguide ignite and maintain a plasma in each of the tubes. Gas flow through the tubes carries the plasmas in all the tubes into the chamber and into contact with the wafer surface.
    Type: Grant
    Filed: October 9, 1997
    Date of Patent: September 7, 1999
    Assignee: Applied Materials, Inc.
    Inventors: Hongching Shan, Harald Herchen, Michael Welch