Abstract: Apparatus for programmably orienting a semiconductor wafer in an ion implantation system so as to limit channeling and to control the depth of penetration of impinging ions. The apparatus is associated with a processing chamber door and includes a rotatable vacuum chuck for engaging the wafer and a motor for rotating the vacuum chuck and the wafer through a preselected angular displacement. The apparatus further includes a programmable control assembly operative to deenergize the motor upon sensing rotation of the vacuum chuck through the preselected angular displacement. The wafer orientation apparatus is typically utilized in a system for the vertical transfer of wafers between a cassette and a processing chamber.

Abstract: A ferrite-to-metal bond suitable for the environment of a high-power microwave circulator is disclosed. The bonding surface of a gyromagnetic ferrite or garnet button is metallized by a sputtering process that deposits successive layers of nichrome, copper and gold thereon. During the sputtering process, a flexible stainless steel band surrounds the button to prevent sputtered material from being deposited on other than the bonding surface of the button. The metallized bonding surface is then soldered to a metal wall of the circulator. The bond so formed is capable of withstanding a peak power level in the circulator of 2.0 megawatts and an average power level of 3.5 kilowatts under standing-wave conditions.