Abstract: Metal contacts and interconnections for integrated circuits utilize copper as the primary conductor, with the copper being totally encased in refractory metal layers on both top and bottom surfaces and also sidewalls. The contact hole in silicon oxide may be filled with a plug of refractory metal before the copper is deposited, or the first refractory metal layer may be conformally deposited to coat the sidewalls of the hole.
Type:
Grant
Filed:
August 13, 1987
Date of Patent:
June 27, 1989
Assignee:
Texas Instruments Incorporated
Inventors:
Robert C. Hooper, Bobby A. Roane, Douglas P. Verret