Abstract: The present invention relates to a metal-semiconductor contact comprising a semiconductor layer and comprising a metallization applied to the semiconductor layer, a high dopant concentration being introduced into the semiconductor layer such that a non-reactive metal-semiconductor contact is formed between the metallization and the semiconductor layer. The metallization and/or the semiconductor layer are formed in such a way that only a fraction of the introduced doping concentration is electrically active, and a semiconductor layer doped only with this fraction of the doping concentration only forms a Schottky contact when contact is made with the metallization. Furthermore, the invention relates to a semiconductor component comprising a drain zone, body zones embedded therein and source zones again embedded therein. The semiconductor component has metal-semiconductor contacts in which the contacts made contact only with the source zones but not with the body zones.

Abstract: An apparatus and method for dissolving gas or gases in liquid fuel to improve combustion of the liquid fuel when injected into a combustion chamber is provided. A gas-charger unit is provided to dissolve the gas into liquid fuel at a first pressure. The pressure of the fuel/gas solution is raised to a second pressure before injection of the atomized fuel into a combustion chamber. In one embodiment, a high pressure gas or gasses is/are introduced into the gas charger at a crosscurrent to the liquid fuel. In another embodiment, a gas charger for dissolving gas into a liquid fuel is provided including a plurality of highly porous baffles to increase the contact surfaces between the gas and the liquid.

Abstract: A method for fabricating a transistor configuration including at least one trench transistor cell has a gate electrode and a field electrode disposed in a trench below the gate electrode. The trenches are formed in a semiconductor substrate. A drift zone, a channel zone, and a source zone are in each case provided in the semiconductor substrate. According to the invention, the source zone and/or the channel zone are formed at the earliest after the introduction of the trenches into the semiconductor substrate by implantation and diffusion.

Abstract: A clamping spring for a spring terminal includes a fixed leg and an angular spring leg disposed resiliently on the fixed leg. An auxiliary spring leg is disposed resiliently on the fixed leg and acts with its spring force on the spring leg.

Abstract: A sheet-fed printing machine made up of units in an in-line construction includes a sheet-feeding unit disposed between a sheet separating unit and a sheet processing unit following the sheet separating unit. The sheet feeding unit is formed so that it is selectively pre-arrangeable upline from various types of sheet processing units for creating various types of sheet-fed printing machines of a building block system.

Abstract: A thyristor includes a semiconductor body having a first emitter layer and a first base layer on an anode side, a second base layer and a second emitter layer on a cathode side, a cathode contact, and an electrically insulating insulation layer having openings. The insulation layer is disposed between the second emitter layer and the cathode contact. The openings have dimensions and spacings making the insulation layer form an electrical resistor for reducing current filamentation. A series resistor is incorporated on the cathode side and is formed by the pierced insulation layer between the cathode side metallizing, forming the terminal contact, and the doped semiconductor material of the emitter on the cathode side. The openings are preferably cylindrical. In a silicon component element, the insulation layer preferably is SiO2 or Si3N4, or a layered succession of SiO2 and Si3N4.

Abstract: The invention relates to a plug-in contact (10) configured as a single-piece and made from a metal strip, comprising a pin-shaped contact part (12) and a connecting part (16) for connecting an electric line (18). A guide part (14) is arranged between the contact part (12) and the connecting part (16). The guide part (14) is configured in the shape of a box with a triangular cross-section and a flat side of said guide part (14) is arranged at a distance parallel to the original level of the metal strip.