Abstract: A push release latch for a display device is provided according to an embodiment of the invention. The push release latch includes a slider portion adapted to slide substantially laterally within a latch receptacle of a housing with respect to an actuation axis A of the push release latch. The slider portion includes a latch projection adapted to engage and retain a display screen and at least one actuator projection that extends from the slider portion. The latch further includes a push portion adapted to travel within the latch receptacle substantially along the actuation axis A. The push portion includes at least one sloped actuation surface that engages the at least one actuator projection of the slider portion. The at least one sloped actuation surface forces the at least one latch projection and the slider portion to move substantially laterally in response to a depression force.

Abstract: A high voltage lateral Double diffused Metal Oxide Semiconductor (DMOS) transistor includes a plurality of well regions of a first conductivity type formed to be spaced out within a well region of a second conductivity type between a channel region of the first conductivity type and a drain region of the second conductivity type. Most current is carried through some portions of the well region of the second conductivity type in which the well regions of the first conductivity do not appear so that the current carrying performance of the device is improved. When a bias voltage is applied to the drain region, the well region of the second conductivity type is completely depleted at other portions where the well region of the second conductivity type and the well regions of the first conductivity type alternately appear so that the breakdown voltage of the device can be increased.

Abstract: A quick punch-through integrated gate bipolar transistor (IGBT) includes a drift region and a gate. The drift region has a drift region dopant concentration and a drift region thickness. The gate has a gate capacitance. The drift region dopant concentration, drift region thickness and gate capacitance are adjusted dependent at least in part upon the PNP gain of the IGBT to maintain the potential difference between the gate and emitter at a level greater than the IGBT threshold voltage when the collector voltage reaches the bus voltage. This insures that the hole carrier concentration remains approximately equal to or greater than the drift region dopant concentration when the depletion layer punches through to the buffer region during the turn-off delay. Thus, the collector voltage overshoot and the rate of change of voltage and current are controlled, and electromagnetic interference is reduced, during turn off.

Abstract: In a power semiconductor device 10, a continuous trench has an outer circumferential portion 58 that includes a field plate and inner portions 28 that carry include one or more gate runners 34 to that the gate runners and the field plate are integral with each other. The trench structure 58, 28 is simpler to form and takes up less surface space that the separate structures of the prior art. The trench is lined with an insulator and further filled with conductive polysilicon and a top insulator.

Abstract: An IGBT has striped cell with source stripes 2a, 2b continuous or segmented along the length of the base stripe 3. The opposite stripes are periodically connected together by the N+ contact regions 20 to provide channel resistance along the width of the source stripes 2a, 2b. For continuous stripes the resistance between two sequential contact areas 20a, 20b is greatest in the middle and current concentrates near the source contact regions 20. The wider the spacing between the contacts 20, the larger the resistive drop to the midpoint between two N+ contacts 20.

Abstract: Merging together the drift regions in a low-power trench MOSFET device via a dopant implant through the bottom of the trench permits use of a very small cell pitch, resulting in a very high channel density and a uniformly doped channel and a consequent significant reduction in the channel resistance. By properly choosing the implant dose and the annealing parameters of the drift region, the channel length of the device can be closely controlled, and the channel doping may be made highly uniform. In comparison with a conventional device, the threshold voltage is reduced, the channel resistance is lowered, and the drift region on-resistance is also lowered. Implementing the merged drift regions requires incorporation of a new edge termination design, so that the PN junction formed by the P epi-layer and the N+ substrate can be terminated at the edge of the die.

Abstract: A method of analyzing electrocardiogram (ECG) data, including data derived from a paper chart, includes the steps of providing ECG data to create a computer-readable ECG data file representative of the ECG chart, storing the ECG data file in a memory of a computer, opening the ECG data file and displaying on a computer display an ECG plot corresponding to the ECG data file, calibrating the x-axis and y-axis of the displayed ECG plot with an x-axis scale and a y-axis scale, identifying characteristics of the ECG plot by using an input device connected to the computer, and measuring the identified characteristics.

Abstract: An integrated circuit (IC) configured for being connected to an external reference voltage uses an IC reference voltage to determine the logic levels of signals applied to the IC. The IC includes an internal reference voltage generator and logic for selecting one of the internal reference voltage and the external reference voltage for use as the IC reference voltage dependent at least in part upon the operational mode of the IC.

Abstract: A self-propelled endoscopic micro-robot, comprising a head for obtaining the errorless information of an interior of a tubular organ; an impact force generating unit connected the head generating an impact force according to a pneumatic pressure externally supplied and sucked by a air pressure supplier and making the self-propelled endoscopic micro-robot move in the tubular organ; and a plurality of supporting arms connected the head with end of the impact force for covering the impact force generating unit, making a housing of the self-propelled endoscopic micro-robot, and adjusting frictional force between the interior of the tubular organ and the housing as desired.

Abstract: A force sensing module with reduced sensitivity to torque in order to accurately measure weight in the presence of longitudinal and lateral torques, comprising two or more sensing means mounted vertically with output signal means combined and adjustable to minimize longitudinal torque response. The force sensing module further comprises a vertical support for lifting and supporting a load, a support arm coupled to the vertical support for engaging and holding a load, first and second sets of strain gauges, spaced from each other and either in vertical or horizontal alignment with each other. The strain gauges are connected at one end to the vertical support and at the other end to the arm for receiving a force proportional to the load and for receiving a torque from the arm.

Abstract: Pulse width modulated (“Class D”) amplifiers and controllers switching in the 50 khz to 2 MHz range generate harmonics which interfere with AM radio reception. This has precluded wide spread acceptance of class D amplifiers in products with an AM radio. The amplifiers described here use a modified modulation technique when operating with an AM radio to avoid generating harmonics at the receiver selected frequency or its intermediate (IF) frequency. One embodiment uses a harmonic avoidance modulator. A second embodiment uses two or more oscillators and tests for the least distorted output signal. A third embodiment switches the mode of operation to a class AB amplifier when an AM signal is amplified.

Abstract: A tip assembly includes a tip having a nose portion. The tip defines a central bore. The nose portion includes a lip portion and defines a counterbore. The counterbore has a counterbore side wall and a seat surface. The counterbore is contiguous with the central bore. An insert member includes an inner surface, an outer surface and a side wall. The inner surface is opposite the outer surface. The side wall interconnects the inner surface and the outer surface. The insert defines a central aperture that extends from the inner surface to the outer surface. The insert is disposed within the counterbore such that the central aperture is substantially concentric with the central bore of the tip. The lip portion of the tip engages the outer surface of the insert.

Abstract: An aircraft landing light assembly having a resilient vibration dampening mounting system for absorbing propeller and engine induced fuselage vibrations and the like for preventing premature vibrational induced lamp failure. Light assembly includes forward and rear rings that engage opposite faces of the rim of a sealed beam lamp located between the two rings. A resilient O-ring sits in the forward ring. Four cylindrically-shaped shock damper mounts sit in tapered wells on the back of the rear ring for protecting the sealed beam lamp from premature vibrational lamp failure, as well as for fastening the light assembly together and to the aircraft mounting bracket. Shock damper mounts include an enlarged cylindrically-shaped resilient damper material having a threaded headless screw located on each end.