Abstract: An interconnect structure for use in semiconductor devices which interconnects a plurality of dissimilar metal wiring layers, which are connected vias, by incorporating shaped voids in the metal layers. The invention also discloses a method by which such structures are constructed.

Abstract: A dielectric structure, wherein two fully cured photoimageable dielectric (PID) layers of the structure are nonadhesively interfaced by a partially cured PID layer. The partially cured PID layer includes a power plane sandwiched between a first partially cured PID sheet and a second partially cured PID sheet. The fully cured PID layers each include an internal power plane, a plated via having a blind end conductively coupled to the internal power plane, and a plated via passing through the fully cured PID layer. The dielectric structure may further include a first PID film partially cured and nonadhesively coupled to one of the fully cured PID layers. The dialectric structure may further include a second PID film partially cured and nonadhesively coupled to the other fully cured PID layer.