Patents Represented by Law Firm Leob & Loeb LLP
  • Semiconductor integrated circuit device
    Patent number: 5834967
    Abstract: A semiconductor integrated circuit device includes a leak detection circuit which can be realized by small pattern area provides voltage Vb through two transistors M1n and M2n, which are caused to be operative in the sub-threshold area without use of a resistor at the gate of a leak current detection transistor MLn. The leak current detection magnification does not become dependent upon power supply voltage and temperature. Thus, detection of the leakage current can be precisely carried out.
    Type: Grant
    Filed: September 3, 1996
    Date of Patent: November 10, 1998
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Tadahiro Kuroda, Tetsuya Fujita