Abstract: A process for treating silica dielectric film on a substrate, which includes reacting a suitable hydrophilic silica film with an effective amount of a multifunctional surface modification agent. The film is present on a substrate and optionally has a pore structure with hydrophilic pore surfaces, and the reaction is conducted for a period of time sufficient for said surface modification agent to penetrate said pore structure and produce a treated silica film having a dielectric constant of about 3 or less, wherein the surface modification agent is hydrophobic and suitable for silylating or capping silanol moieties on such hydrophilic surfaces. Dielectric films and integrated circuits including such films are also disclosed.

Abstract: The present invention relates to novel low dielectric constant nanoporous dielectric films having improved mechanical strength, and to improved processes for producing the same on substrates suitable for use in the production of integrated circuits. The nanoporous dielectric films are prepared by a process of preparing a mixture of a spin-on-glass material with a suitable thermally degradable polymer that is soluble in polar solvents. The resulting mixture is then applied onto a substrate suitable for use in the production of an integrated circuit, to produce a coated substrate that is heated for a time and at one or more temperatures effective to degrade the polymer, so as to produce the desired low dielectric nanoporous dielectric film.

Abstract: A method for cleaning the surface of a semiconductor wafer having an organic dielectric film thereon by removing residual slurry particles adhered to the wafer surface after chemical-mechanical planarization is provided. The semiconductor is subjected to a post CMP cleaning step by applying mechanical frictional force to the surface of the wafer while concurrently applying to the wafer surface and aqueous solution having a pH of greater than 10 for a period of time sufficient to wet and clean the wafer surface, the basic aqueous solution comprised of a surfactant and a tetra alkyl quaternary ammonium hydroxide compound such as tetramethylammonium hydroxide.

Abstract: A process for forming a photoresist image on a substrate and a process for forming metal contacts on a substrate are described.

Abstract: A process for forming a nanoporous dielectric silica coating on a surface of a substrate. The process includes spin-depositing alkoxysilane composition onto a surface of a substrate; spin depositing a surface hydrophobizing agent or a solvent onto an edge portion of the substrate to thereby remove the alkoxysilane composition from that area; and then curing the alkoxysilane composition to form a nanoporous dielectric silica coating. In another embodiment, an alkoxysilane composition layer is deposited onto a surface of a substrate. Then a solvent for the alkoxysilane substantially removes a portion of the alkoxysilane layer on the edge portion of the surface. This results in a transfer or cascading of a quantity of the alkoxysilane from a region adjacent to the edge portion to form a relatively thinner layer of the alkoxysilane onto the edge portion of the substrate surface. Then the relatively thinner alkoxysilane layer is removed prior to curing the alkoxysilane.

Abstract: The invention relates to nanoporous dielectric films and to a process for their manufacture. Such films are useful in the production of integrated circuits. Such films are produced from a precursor of an alkoxysilane; a relatively low volatility solvent composition comprising a e C.sub.1 to C.sub.4 alkylether of a C.sub.1 to C.sub.4 alkylene glycol which is miscible in water and alkoxysilanes, having a hydroxyl concentration of 0.0084 mole/cm.sup.3 or less, a boiling point of about 175.degree. C. or more at atmospheric pressure and a weight average molecular weight of about 120 or more; a relatively high volatility solvent composition having a boiling point below that of the relatively low volatility solvent composition; optional water and an optional catalytic amount of an acid.

Abstract: The invention relates to the formation of structures in microelectronic devices such as integrated circuit devices by means of borderless via architectures in intermetal dielectrics. An integrated circuit structure has a substrate, a layer of a second dielectric material on the substrate and spaced apart metal contacts on the second dielectric. A space between adjacent metal contact side walls is filled with the second dielectric material. A ledge of a first dielectric material is on top of each second dielectric material filled space. The ledges are attached to adjacent side walls such that each ledge either fully spans the width of the filled space between adjacent side walls; or partially spans the width of the filled space between adjacent side walls, and the area between adjacent ledges is filled with second dielectric material. A top surface of each of the metal contacts, a top surface of the ledges and a top surface of any filled areas between adjacent ledges are at a common level.

Abstract: The invention relates to nanoporous dielectric films and to a process for their manufacture. Such films are useful in the production of integrated circuits. Such films are produced from a precursor of an alkoxysilane; a relatively low volatility solvent composition comprising an ether of a C.sub.1 to C.sub.4 alkylene glycol which is miscible in water and alkoxysilanes, having a hydroxyl concentration of 0.021 mole/cm.sup.3 or less, a boiling point of about 175 .degree. C. or more at atmospheric pressure and a weight average molecular weight of about 100 or more; a relatively high volatility solvent composition having a boiling point below that of the relatively low volatility solvent composition; optional water and an optional catalytic amount of an acid.

Abstract: A process for the preparation of substrates used in the manufacture of integrated circuits wherein spin-on low dielectric constant (low-k) polymer films are applied on semiconductor substrates. A non-etchback processing of spin-on low-k polymer films, without losing the low dielectric constant feature of the film, especially in between metal lines, is achieved utilizing electron beam radiation. A polymeric dielectric film is applied and dried onto a substrate and exposed to electron beam radiation under conditions sufficient to partially cure the dielectric layer. The exposing forms a relatively more hardened topmost portion of the dielectric layer and a relatively less hardened underlying portion of the dielectric layer.

Abstract: A process for forming a nanoporous dielectric coating on a substrate. The process follows the steps of blending an alkoxysilane with a solvent composition and optional water; depositing the mixture onto a substrate while evaporating at least a portion of the solvent composition; placing the substrate in a sealed chamber and evacuating the chamber to a pressure below atmospheric pressure; exposing the substrate to water vapor at a pressure below atmospheric pressure and then exposing the substrate to base vapor.

Abstract: Nanoporous silica dielectric films are modified by electron beam exposure after an optional hydrophobic treatment by an organic reactant. After formation of the film onto a substrate, the substrate is placed inside a large area electron beam exposure system. The resulting films are characterized by having a low dielectric constant and low water or silanol content compared to thermally cured films. Also, e-beam cured films have higher mechanical strength and better resistance to chemical solvents and oxygen plasmas compared to thermally cured films.

Abstract: A process for forming a nanoporous dielectric coating on a substrate. The process includes either (i) combining a stream of an alkoxysilane composition with a stream of a base containing catalyst composition to form a combined composition stream; immediately depositing the combined composition stream onto a surface of a substrate and exposing the combined composition to water (in either order or simultaneously); and curing the combined composition; or (ii) combining a stream of an alkoxysilane composition with a stream of water to form a combined composition stream; immediately depositing the combined composition stream onto a surface of a substrate; and curing the combined composition.

Abstract: A process for the manufacture of nanoporous silica dielectric films by vapor deposition of silica precursors on a substrate. The process provides for vaporizing at least one alkoxysilane composition; depositing the vaporized alkoxysilane composition onto a substrate; exposing the deposited alkoxysilane composition to a water vapor, and either an acid or a base vapor; and drying the exposed alkoxysilane composition, thereby forming a relatively high porosity, low dielectric constant, silicon containing polymer composition on the substrate.

Abstract: A method for forming a gap-filled, planarization structure of dielectric materials on a substrate topography useful for forming microelectronic devices. A dielectric material is first deposited as continuous, dry dielectric layer, preferably a SOG layer. Then the dielectric layer is partially removed by chemical-mechanical polishing (CMP). The chemical and mechanical properties of the structure can be chosen by varying the composition of the SOG layer and the subsequent CMP conditions.

Abstract: A method for purging and passivating a vacuum chamber suitable for use in the production of integrated circuit structures on semiconductor wafers. The method includes flowing a heated, non-reactive gas, such as argon gas, through the chamber for purposes of decontaminating the chamber and subsequently filling the chamber with a selected gas such as nitrogen to passivate the chamber for storage or shipping purposes.

Abstract: An apparatus for polishing semiconductor wafers and other workpieces that includes polishing pads mounted on respective platens at multiple polishing stations. Multiple wafer heads, at least one greater in number than the number of polishing stations, can be loaded with individual wafers. The wafer heads are suspended from a carousel, which provides circumferential positioning of the heads relative to the polishing pads, and the wafer heads oscillate radially as supported by the carousel to sweep linearly across the respective pads in radial directions with respect to the rotatable carousel. Each polishing station includes a pad conditioner to recondition the polishing pad so that it retains a high polishing rate. Washing stations may be disposed between polishing stations and between the polishing stations and a transfer and washing station to wash the wafer as the carousel moves. A transfer and washing station is disposed similarly to the polishing pads.

Abstract: An improved slit valve door for sealing an aperture in the wall of a semiconductor process chamber. The slit valve door consists of an aperture cover plate with a recess in it for receiving a removable insert. An O-ring seal is placed over the insert, and when the insert is placed in the recess of the aperture cover plate, the O-ring moves into an O-ring seat in the aperture cover plate. As the insert seats in the recess and is secured to the cover plate by means of screws protruding from the floor of the recess, a dovetail groove is formed which retains the O-ring.

Abstract: In a multi-color imaging apparatus utilizing a recharge step between two image creation steps, a corona generating device is used to recharge the developed image areas and untoned areas of a charge retentive surface to a lower electrical potential than that associated with the developed image areas before recharge, so that the residual voltage associated with the developed image is substantially reduced and a minimal level of negative charge is driven through the toner layer(s). An electrical charge associated with any previously developed images is substantially neutralized prior to development of any subsequent images thereon.

Abstract: A monolithic array of two or more independently addressable, closely spaced diode lasers having low thermal, electrical, and optical crosstalk. An isolation groove is formed between the adjacent laser elements, which are defined by rib loaded waveguides created by etching mesas above a planar active multilayer waveguide. Separate electrical connections to the ribs, and a common electrical connection to the substrate, enable individual addressing of each laser element. Selectively added blocking layers and/or insulating layers are added to the structure to provide improved electrical and/or thermal isolation.

Abstract: A roller for increasing the rate of permeability of liquid carrier from an image formed from a liquid developer comprised of toner particles and liquid carrier. Perforations formed through the skin covering of the blotter roller provide high quality transfer of an image having maximum toner particles and minimal liquid carrier to a final copy sheet, at an increased process speed.