Patents Represented by Attorney Lia Dennison

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  • Method for enhancing oxide to nitride selectivity through the use of independent heat control
    Patent number: 5880036
    Abstract: A process for controlling the etch of a silicon dioxide layer at a high etch rate and high selectivity with respect to silicon nitride, particularly in a multilayer structure, by maintaining various portions of the etch chamber at elevated temperatures.
    Type: Grant
    Filed: November 15, 1993
    Date of Patent: March 9, 1999
    Assignee: Micron Technology, Inc.
    Inventors: David S. Becker, Guy T. Blalock, Lyle D. Breiner
  • Method for forming electron emitters
    Patent number: 5532177
    Abstract: Electron emitters and a method of fabricating emitters which have a concentration gradient of impurities, such that the highest concentration of impurities is at the apex of the emitters, and decreases toward the base of the emitters. The method comprises the steps of doping, patterning, etching, and oxidizing the substrate, thereby forming the emitters having impurity gradients.
    Type: Grant
    Filed: July 7, 1993
    Date of Patent: July 2, 1996
    Assignee: Micron Display Technology
    Inventor: David A. Cathey