Patents Represented by Attorney Lia P. Dennison

Find this attorney in the Justia Lawyer Directory

  • Isolation structure of a shallow semiconductor device trench
    Patent number: 5868870
    Abstract: A trench for isolating active devices on a semiconductor substrate, formed by creating a trench which has a peripheral edge, and disposing an isolating material in the trench. The isolating material extends over the peripheral edge of the trench, thereby covering at least a portion of the substrate surrounding the trench, and substantially limiting leakage of the active devices disposed on the substrate.
    Type: Grant
    Filed: February 11, 1997
    Date of Patent: February 9, 1999
    Assignee: Micron Technology, Inc.
    Inventors: Pierre C. Fazan, Martin C. Roberts, Gurtej S. Sandhu