Patents Represented by Attorney Lia Pappas Dennison

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  • Control of etch profiles during extended overetch
    Patent number: 5759922
    Abstract: An etch process to substantially eliminate notching in sub-micron features by exposing a wafer to a chlorine plasma; operating the plasma under conditions which reduce the relative role of ions in the etch (as compared to neutrals in the etch); and essentially eliminating the magnetic field confinement in the transition zone of the etcher, i.e., the zone between the high density source and the wafer.
    Type: Grant
    Filed: January 10, 1997
    Date of Patent: June 2, 1998
    Assignee: Micron Technology, Inc.
    Inventor: Kevin Donohoe