Abstract: A hierarchical method of legalizing the placement of logic cells in the presence of blockages selectively classifies the blockages into at least two different sets based on size (large and small). Movable logic cells are relocated first among coarse regions between large blockages to remove overlaps among the cells and the large blockages without regard to small blockages (while satisfying capacity constraints of the coarse regions), and thereafter the movable logic cells are relocated among fine regions between small blockages to remove all cell overlaps (while satisfying capacity constraints of the fine regions). The coarse and fine regions may be horizontal slices of the placement region having a height corresponding to a single circuit row height of the design. Cells are relocated with minimal perturbation from the previous placement, preserving wirelength and timing optimizations. The legalization technique may utilize more than two levels of granularity with multiple relocation stages.

Abstract: A buffer insertion technique addresses slew constraints while minimizing buffer cost. The method builds initial solutions for the sinks, each having an associated cost, slew and capacitance. As a solution propagates toward a source, wire capacitance and wire slew are added to the solution. When a buffer is selected for possible insertion, the slew of the solution is set to zero while the cost of the solution is incremented based on the selected buffer and the capacitance is set to an intrinsic capacitance of the buffer. The solutions of two intersecting wire branches are merged by adding branch capacitances and costs, and selecting the highest branch slew. The solution sets are updated by disregarding solutions which have a slew component greater than a slew constraint, and any solution that is dominated by another solution is eliminated. The solution having the smallest cost is selected as the final solution.

Abstract: A method for circuit simulation using a netlist in which a first device having an unmodeled, nonlinear behavior is modified by inserting a second device which has a nonlinear response approximating the unmodeled nonlinear behavior. The first device may be for example a first transistor and the second device may be a variable current source, in particular one whose current is modeled after a floating transistor template which represents gate leakage current of the first transistor (gate-to-source or gate-to-drain). During simulation of the circuit a parameter such as a gate-to-source voltage of the second transistor is controlled to model gate leakage. The model parameters can be a function of an effective quantum mechanical oxide thickness value of a gate of the first transistor technology.

Abstract: A test setup for estimating the critical charge of a circuit under test (CUT) uses a charge injection circuit having a switched capacitor that is selectively connected to a node of the CUT. A voltage measurement circuit measures the voltage at a tap in the charge injection circuit before and after the charge is injected. When the injected charge causes an upset in the logical state of the CUT, the critical charge is calculated as the product of the voltage difference and the known capacitance of the capacitor. In one embodiment, (NMOS drain strike simulation) the amount of charge injected is controlled by a variable pulse width generator gating the switch of the charge injection circuit. In another embodiment (PMOS drain strike simulation) the amount of charge injected is controlled by a variable voltage supply selectively connected to the charge storage node.

Abstract: A delay circuit has a fixed delay path at a lower voltage level, a level converter, and an adjustable delay path at a higher voltage level. The fixed delay path includes an inverter chain, and the adjustable delay path includes serially-connected delay elements selectively connected to the circuit output. In an application for a local clock buffer of a static, random-access memory (SRAM), the lower voltage level is that of the local clock buffer, and the higher voltage level is that of the SRAM. These voltages may vary in response to dynamic voltage scaling, requiring re-calibration of the adjustable delay path. The adjustable delay path may be calibrated by progressively increasing the read access time of the SRAM array until a contemporaneous read operation returns the correct output, or by using a replica SRAM path to simulate variations in delay with changes in voltage supply.

Abstract: A distributed charge pump system uses a delay element and frequency dividers to generate out of phase pump clock signals that drive different charge pumps, to offset peak current clock edges for each charge pump and thereby reduce overall peak power. Clock signal division and phase offset may be extended to multiple levels for further smoothing of the pump clock signal transitions. A dual frequency divider may be used which receives the clock signal and its complement, and generates two divided signals that are 90° out of phase. In an illustrative embodiment the clock generator comprises a variable-frequency clock source, and a voltage regulator senses an output voltage of the charge pumps, generates a reference voltage based on a currently selected frequency of the variable-frequency clock source, and temporarily disables the charge pumps (by turning off local pump clocks) when the output voltage is greater than the reference voltage.

Abstract: A unified test structure having a large number of electronic devices under test is used to characterize both capacitance-voltage parameters (C-V) and current-voltage parameters (I-V) of the devices. The devices are arranged in an array of columns and rows, and selected by control logic which gates input/output pins that act variously as current sources, sinks, clamps, measurement ports and sense lines. The capacitance-voltage parameter is measured by taking baseline and excited current measurements for different excitation voltage frequencies, calculating current differences between the baseline and excited current measurements, and generating a linear relationship between the current differences and the different frequencies. The capacitance is then derived by dividing a slope of a line representing the linear relationship by the excitation voltage. Different electronic devices may be so tested, including transistors and interconnect structures.

Abstract: A method of modeling electromagnetism in an irregular conductive plane, by dividing the surface into a grid of unequal and unaligned rectangles, assigning a circuit node location to a center of each rectangle, and calculating capacitive and inductive parameters based on the center circuit node locations. Rectangulation is accomplished using automated, recursive bisection. Capacitive segments are assigned to each circuit node and coincide with the corresponding rectangles. Inductive segments are assigned between adjacent rectangle pairs, with a width of an inductive segment defined as the common boundary of the corresponding pair of rectangles and the length of the inductive segment defined as the normal distance between circuit nodes of the two rectangles. Placement of the circuit nodes at the centers of the rectangles significantly reduces the number of nodes and segments, and provides a faster yet comprehensive analysis framework.

Abstract: A unified test structure having a large number of electronic devices under test is used to characterize both capacitance-voltage parameters (C-V) and current-voltage parameters (I-V) of the devices. The devices are arranged in an array of columns and rows, and selected by control logic which gates input/output pins that act variously as current sources, sinks, clamps, measurement ports and sense lines. The capacitance-voltage parameter is measured by taking baseline and excited current measurements for different excitation voltage frequencies, calculating current differences between the baseline and excited current measurements, and generating a linear relationship between the current differences and the different frequencies. The capacitance is then derived by dividing a slope of a line representing the linear relationship by the excitation voltage. Different electronic devices may be so tested, including transistors and interconnect structures.

Abstract: A method of designing a layout of an integrated circuit for increased radiation tolerance by ensuring that any critical components (those deemed particularly sensitive to radiation-induced soft errors) are at spacings greater than a predetermined threshold based on particle migration within the silicon substrate. The method starts with an initial placement, identifies the objects for which radiation tolerance is desired, determines whether any of those objects and, if so, moves the relevant objects to increase the spacing. An exemplary threshold for contemporary CMOS device technologies is 5 ?m. The objects can be moved by vertically and/or horizontally shifting away from a reference point of the integrated circuit. The critical objects may include triplicated (redundant) structures, clock control latches, or a reset bit. The method can be used in conjunction with other placement optimizations such as area, power and timing.

Abstract: A switched-capacitor charge pump comprises a two-phase charging circuit, cross-coupled transistors connected to output nodes of the switched capacitors, and a pump output connected to source terminals of the cross-coupled transistors. The charge pump has side transistors for boosting charge transfer, and gating logic of the side transistors includes level shifters which control connections to the pump output or a reference voltage. Negative and positive charge pump embodiments are provided. The charging circuit advantageously utilizes non-overlapping wide and narrow clock signals to generate multiple gating signals. The pump clock circuit preferably provides independent, programmable adjustment of the widths of the wide and narrow clock signals. An override mode can be provided using clamping circuits which shunt the pump output to the second nodes of the switched capacitors.

Abstract: A latch circuit having three latch stages generates a majority output value from the stages, senses when the latch stage outputs are not all equal, and feeds the majority output value back to inputs of the latch stages to reload the latch stages. The latch circuit uses a not-equal gate whose output is an error signal that can be monitored to determine when a single-event upset has occurred. A master stage is controlled by a first multiplexer which receives one system clock signal, while a slave stage is controlled by a second multiplexer which receives another system clock signal, and the latch stage outputs are connected to respective inputs of the not-equal gate, whose output is connected to second inputs of the multiplexers. The latch circuit is part of a latch control system, and reloading of the latch stages takes less than one cycle of the system clock (less than 500 picoseconds).

Abstract: A logic book for a programmable device such as an application-specific integrated circuit (ASIC) achieves improved radiation tolerance by providing notches in an implant well between adjacent transistors and fills the notches with complementary well regions that act as a barrier to charge migration. For example, a row of n-type field effect transistors (NFETs) is located in a Pwell region, while a row of p-type transistors is located in an Nwell region with portions of the Nwell region extending between the NFETs. More complicated embodiments of the present invention include embedded well islands to provide barriers for adjacent transistors in both rows of the book.

Abstract: A logic book for a programmable device such as an application-specific integrated circuit (ASIC) achieves improved radiation tolerance by providing transistors of the same doping type in different well regions that are physically isolated by intervening well regions with complementary doping. For example, n-type field effect transistors (NFETs) may be located in two outer rows of the book with separate Pwell regions, while p-type transistors are located in two inner rows of the book sharing a common Nwell region. Since the NFETs in separate wells are physically isolated from each other, a circuit structure which uses two NFETs in the two outer rows is much less likely to suffer multiple upsets from a single radiation strike. More complicated embodiments of the present invention include additional transistor rows in the stack with isolated Nwells and Pwells.

Abstract: A method of determining buffer insertion locations in an integrated circuit design establishes candidate locations for inserting buffers into a net, and selects buffer insertion locations from among the candidates based on slew constraints. The selection of buffer insertion locations preferably optimizes slack and buffer cost while keeping slew from any buffered node to any sink less than a required slew rate. The slew analysis computes an output slew SL(v) of a given buffer b inserted at a node v as SL(v)=RS(b)·C(v)+KS(b), where C(v) is the downstream capacitance at v, RS(b) is the slew resistance of buffer b, and KS(b) is the intrinsic slew of buffer b. The delay through a given buffer may also be computed based on signal polarity. However, the invention still preferably uses worst-case slew resistance and intrinsic slew in considering the slew constraints.

Abstract: A secure communication methodology is presented. The client device is configured to download application code and/or content data from a server operated by a service provider. Embedded within the client is a client private key, a client serial number, and a copy of a server public key. The client forms a request, which includes the client serial number, encrypts the request with the server public key, and sends the download request to the server. The server decrypts the request with the server's private key and authenticates the client. The received client serial number is used to search for a client public key that corresponds to the embedded client private key. The server encrypts its response, which includes the requested information, with the client public key of the requesting client, and only the private key in the requesting client can be used to decrypt the information downloaded from the server.

Abstract: A method of modeling soft errors in a logic circuit uses two separate current sources inserted at the source and drain of a device to simulate a single event upset (SEU) caused by, e.g., an alpha-particle strike. In an nfet implementation the current flows from the source or drain toward the body of the device. Current waveforms having known amplitudes are injected at the current sources while simulating operation of the logic circuit and the state of the logic circuit is determined from the simulated operation. The amplitudes of the current waveforms can be independently adjusted. The simulator monitors the state of device and makes a log entry when a transition occurs. The process may be repeated for other devices in the logic circuit to provide an overall characterization of the susceptibility of the circuit to soft errors.

Abstract: The layout of latches in a common clock domain is efficiently optimized to shrink the physical size of the domain while maintaining timing requirements. The latches are placed in a first layout preferably using quadratic placement, and a star object is built representing an interim clock structure. The latches are weighted based on wire distance from a source of the star object, and then re-placed using the weighting. The weighted placement and repartitioning may be iteratively repeated until a target number of bins is reached. The boundary of the latches in the final global placement is used to define a movebound for further detailed placement.

Abstract: A test structure for statistical characterization of local device mismatches contains densely populated SRAM devices arranged in a row/column addressable array that enables resource sharing of many devices. The test structure includes a built-in sensing mechanism to calibrate or null out sources of error, and current steering to avoid negative effects of current leakage along spurious paths. The gate and drain lines of each column are driven from both the top and bottom to minimizes parasitic effects. The system can handle a large number of devices while still providing high spatial resolution of current measurements.

Abstract: A system and method for user-defined control of the operation and appearance of a computerized instant messaging service and associated user interface is disclosed, providing ease of use, control over presentation and access to instant messaging services, particularly for unsighted and other users requiring assistive technologies. A instant messaging (IM) application includes an active sessions list (ASL) comprised of algorithmically ordered identifiers of all communicants in current active chat sessions with the user. The list is presented on the desktop and focused by a predefined first hot-key. By selecting identifiers from the list and activating a predefined second hot-key, chat windows associated with the communicants are opened and focused for receipt of responsive messages from the user.