Abstract: Gasket comprising an inner ring having an outer surface, an outer ring having an inner surface, and an intermediate ring disposed between the inner ring and the outer ring, wherein the intermediate ring has an inner surface in contact with the outer surface of the inner ring and an outer surface in contact with the inner surface of the outer ring, and wherein the intermediate ring is made of a material that has a hardness less than the hardness of the material of each of the inner ring and the outer ring.

Abstract: A method of protecting a networked industrial controller from network storms is disclosed in the specification. The networked industrial controller has a real-time operating system and communication components performing communication exchanges with connected networks. The method comprises steps of: (a) Initializing a watchdog thread monitor thread to have a high priority within the real-time operating system's kernel level; (b) configuring a watchdog thread to periodically (every TAlive time) send an alive event signal to the watchdog thread monitor thread if all other threads of application programs are operating normally; (c) starting the watchdog thread monitor thread waiting for receiving the alive event signal within a timeout period TAliveTout (TAliveTout is longer than TAlive); (d) identifying a network storm in response to the alive event signal; and (e) controlling the communication exchanges in response to the alive event signal and current phase of the watchdog thread monitor thread.

Abstract: The present invention relates to semi-aqueous compositions and the method using same, to remove highly cross-linked resists and etch-residues. The compositions are comprised of aminobenzenesulfonic acid, water miscible organic solvent and water.

Abstract: A composition and associated method for chemical mechanical planarization (or other polishing) are described. The composition contains a boron surface-modified abrasive, a nitro-substituted sulfonic acid compound, a per-compound oxidizing agent, and water. The composition affords high removal rates for barrier layer materials in metal CMP processes. The composition is particularly useful in conjunction with the associated method for metal CMP applications (e.g., step 2 copper CMP processes).

Abstract: A formulation for removing photoresist, ion implanted photoresist, etch residue or BARC comprises: an ammonium hydroxide and a 2-aminobenzothiazole, remainder water. Preferably the formulation comprises: tetramethyl ammonium hydroxide, tolyltriazole, propylene glycol, 2-aminobenzothiazole, dipropylene glycol monomethyl ether, remainder water; more preferably: tetramethyl ammonium hydroxide 1-15 wt %, tolyltriazole 1-5 wt %, propylene glycol 5-15 wt %, 2-aminobenzothiazole 1-10 wt %; dipropylene glycol monomethyl ether 20-45 wt %, remainder water. The invention is also a method of removing materials selected from the group consisting of photoresist, etch residue, BARC and combinations thereof, from a substrate comprising: applying a formulation, described above, to the substrate to remove the material from the substrate.

Abstract: A compound having the structure: w-A-x-CY—Z(CF3), where CY is cyclohexane or substituted cyclohexane, exemplified by 4-trifluoromethyl-4-methylcarboxy-4?-propyl-1,1?-(bi)cyclohexane.

Abstract: The invention relates to an improvement in apparatus and process for effecting storage and delivery of a gas. The storage and delivery apparatus is comprised of a storage and dispensing vessel containing a medium capable of storing a gas and permitting delivery of the gas stored in the medium from the vessel, the improvement comprising: (a) a reactive liquid having Lewis acidity or basicity; (b) a gas liquid complex in a reversible reacted state formed under conditions of pressure and temperature by contacting the gas having Lewis acidity with the reactive liquid having Lewis basicity or the gas having Lewis basicity with the reactive liquid having Lewis acidity; (c) a non-reactive wick medium holding and dispersing the reactive liquid and the gas liquid complex therein.

Abstract: A method for forming a metal silicate as a high k dielectric in an electronic device, comprising the steps of: providing diethylsilane to a reaction zone; concurrently providing a source of oxygen to the reaction zone; concurrently providing a metal precursor to the reaction zone; reacting the diethylsilane, source of oxygen and metal precursor by chemical vapor deposition to form a metal silicate on a substrate comprising the electronic device. The metal is preferably hafnium, zirconium or mixtures thereof. The dielectric constant of the metal silicate film can be tuned based upon the relative atomic concentration of metal, silicon, and oxygen in the film.

Abstract: An apparatus and a method comprising same for removing metal oxides from a substrate surface are disclosed herein. In one particular embodiment, the apparatus comprises an electrode assembly that has a housing that is at least partially comprised of an insulating material and having an internal volume and at least one fluid inlet that is in fluid communication with the internal volume; a conductive base connected to the housing comprising a plurality of conductive tips that extend therefrom into a target area and a plurality of perforations that extend therethrough and are in fluid communication with the internal volume to allow for a passage of a gas mixture comprising a reducing gas.

Abstract: Particulate and metal ion contamination is removed from a surface, such as a semiconductor wafer containing copper damascene or dual damascene features, employing a fluoride-free aqueous composition comprising a dicarboxylic acid and/or salt thereof; and a hydroxycarboxylic acid and/or salt thereof or amine group containing acid.

Abstract: Fluid storage and leak containment comprising (a) a fluid storage vessel comprising at least one vessel having an interior, an exterior, and an outlet opening between the interior and the exterior; (b) a fluid flow fitting sealably connected to the outlet opening and adjacent the exterior of the at least one vessel, wherein the fluid flow fitting is adapted for withdrawing reactive gas from the interior of the vessel; and (c) a containment enclosure having an interior, an exterior, an open end, and an extraction port adapted for the withdrawal of gas from the interior of the containment enclosure, wherein the open end is adapted to fit over and around the fluid flow fitting such that the containment enclosure surrounds the fluid flow fitting and is adapted to collect any reactive gas leaking from the fluid flow fitting.

Abstract: Ultrasonic probe comprising an elongate body having a first end and a second end, an ultrasonic transducer attached to the probe at or adjacent the first end, and an enlarged support section intermediate the ultrasonic transducer and the second end, wherein the enlarged support section has an equivalent diameter greater than an equivalent diameter of the body at any location between the enlarged support section and the ultrasonic transducer. The probe may be used to introduce ultrasonic energy into ultrasonic cleaning systems.

Abstract: A tool and a method for installing a seal in a fitting through which gas is flowing is disclosed. The tool has a sleeve with a first socket that receives and holds the seal, and a second socket, adjacent to the first, that receives the fitting. A shaft is axially movable within the sleeve and has a contact surface at one end engageable with the seal. The shaft has a conduit with an inlet in communication with the fitting and an outlet that vents to the atmosphere. The seal is loaded into the first socket, the second socket is engaged with the fitting, and the shaft is advanced to push the seal from the first socket into the fitting. Gas flowing through the fitting is conducted to the atmosphere by the conduit, preventing gas pressure build-up behind the seal.

Abstract: A composition and associated method for chemical mechanical planarization (or other polishing) are described. The composition contains a ketoxime compound and water. The composition may also contain an abrasive and/or a per compound oxidizing agent. The composition affords tunability of removal rates for metal, barrier material, and dielectric layer materials in metal CMP. The composition is particularly useful in conjunction with the associated method for metal CMP applications (e.g., step 2 copper CMP processes).

Abstract: This invention relates to an improvement in a low-pressure storage and delivery system for gases having Lewis basicity, particularly hazardous specialty gases such as phosphine and arsine, which are utilized in the electronics industry. The improvement resides in storing the gases in a liquid incorporating a reactive compound having Lewis acidity capable of effecting a reversible reaction between a gas having Lewis basicity. The reactive compound comprises a reactive species that is dissolved, suspended, dispersed, or otherwise mixed with a nonvolatile liquid.

Abstract: A process for producing an isotopically enriched compound of a desired isotope includes (a) providing a cryogenic reaction zone containing a catalyst adapted to catalyze an isotope exchange reaction at a cryogenic reaction temperature, (b) feeding to the cryogenic reaction zone an enriched mixture comprising at least a compound containing the desired isotope, wherein the enriched mixture is enriched in the desired isotope above a natural abundance of the desired isotope, (c) reacting the enriched mixture in the cryogenic reaction zone thereby forming a resulting mixture containing the isotopically enriched compound, and (d) separating the resulting mixture into an enriched product which is enriched in the isotopically enriched compound and a depleted product which is depleted in the isotopically enriched compound.

Abstract: A first aspect of a process of recovering xenon from feed gas includes: providing an adsorption vessel containing adsorbent having a Xe/N2 selectivity ratio <75; feeding into the adsorption vessel feed gas having an initial nitrogen concentration >50% and an initial xenon concentration ?0.5%; evacuating the adsorption vessel; and purging the adsorption vessel at a purge-to-feed ratio ?10. The final xenon concentration is ?15× the initial xenon concentration. A second aspect of the process includes providing an adsorption vessel containing adsorbent having a Xe Henry's law Constant ?50 mmole/g/atm; feeding into the adsorption vessel feed gas having an initial nitrogen concentration >50% and an initial xenon concentration ?0.5%; heating and purging the adsorption vessel to recover xenon having a final concentration ?15× its initial concentration. Apparatus for performing the process are also described.

Abstract: This invention relates to an improvement in a low-pressure storage and delivery system for gases having Lewis acidity, particularly hazardous specialty gases such as BF3 and diborane, which are utilized in the electronics industry. The improvement resides in storing the gases in a liquid incorporating a reactive compound having Lewis basicity capable of effecting a reversible reaction between a gas having Lewis acidity. The reactive compound comprises a reactive species that is dissolved, suspended, dispersed, or otherwise mixed with a nonvolatile liquid.

Abstract: Method for processing an article by contacting the article with a dense fluid. The article is introduced into a sealable processing chamber and the processing chamber is sealed. A dense fluid is prepared by introducing a subcritical fluid into a pressurization vessel and isolating the vessel, and then heating the subcritical fluid at essentially constant volume and essentially constant density to yield a dense fluid. At least a portion of the dense fluid is transferred from the pressurization vessel to the processing chamber, wherein the transfer of the dense fluid is driven by the difference between the pressure in the pressurization vessel and the pressure in the processing chamber, thereby pressurizing the processing chamber with transferred dense fluid. The article is contacted with the transferred dense fluid to yield a spent dense fluid and a treated article, and the spent dense fluid is separated from the treated article.

Abstract: Method for processing an article with a dense processing fluid in a processing chamber while applying ultrasonic energy during processing. The dense fluid may be generated in a separate pressurization vessel and transferred to the processing chamber, or alternatively may be generated directly in the processing chamber. A processing agent may be added to the pressurization vessel, to the processing chamber, or to the dense fluid during transfer from the pressurization vessel to the processing chamber. The ultrasonic energy may be generated continuously at a constant frequency or at variable frequencies. Alternatively, the ultrasonic energy may be generated intermittently.