Abstract: In capacitive sensor circuits where physical contact is required and excess pressure may be inadvertently applied to the sensor surface, aluminum is not sufficiently hard to provide “scratch” protection and may delaminate, causing circuit failure, even if passivation integrity remains intact. Because hard passivation layers alone provide insufficient scratch resistance, at least the capacitive electrodes and preferably all metallization levels within the sensor circuit in the region of the capacitive electrodes between the surface and the active regions of the substrate are formed of a conductive material having a hardness greater than that of aluminum. The selected conductive material preferably has a hardness which is at least as great as the lowest hardness for any interlevel dielectric or passivation material employed.
Abstract: An OTP memory cell in CMOS technology, including a capacitor associated in series with an unbalanced programming transistor, the drain of which is made of a region deeper and less doped than the source.
Type:
Grant
Filed:
December 22, 1999
Date of Patent:
July 16, 2002
Assignee:
STMicroelectronics S.A.
Inventors:
Philippe Candelier, Jean-Pierre Schoellkopf