Abstract: A method for using a mobile switching center (MSC) having a large capacity, particularly a method for using a MSC such that many service providers can use the MSC in common, comprises confirming a caller group to which a corresponding caller belongs by checking a number when a call is initiated from the caller, receiving a called number, authenticating and authorizing the caller, and processing the caller and the call according to the caller group to which the caller belongs. When the authentication and authorization succeed, the process searches for a predefined greeting announcement for the particular caller group and, if one is found, connects the predefined greeting announcement to the caller. The process also determines according to the caller group whether a certain trunk should be used and, if so, connects the call to that trunk.

Abstract: An automatic compensation circuit for so-called “no margin input data” comprises no margin detecting means for receiving input data and detecting whether the input data has no margin by detecting whether the input data overlaps a clock, and no margin compensating means for compensating for a lack of margin between the input data and the clock by selecting either the input data or data having a proper margin with respect to the clock according to the result of the no margin detecting means.

Abstract: A semiconductor device includes a substrate and a first layer of a first conductive material on the substrate, the first layer having a first etching rate. A second layer of a second conductive material has a first hole on a portion of the first layer, the second layer having a second etching rate higher than the first etching rate. A third layer includes a combination of the first and second layers between the first and the second layers, the third layer having a third etching rate lower than the second etching rate. An insulating layer has a second hole on the third layer, the insulating layer having a fourth etching rate higher than the first etching rate. A transparent conductive layer is on the third layer through the first and second holes.

Abstract: The present invention relates to a method for manufacturing a polarization film for a liquid crystal display and, more particularly, to a method for manufacturing a polarization film having improved wide band characteristics and improved reflectivity by binding together plural liquid crystal films having different selective light-reflecting central wavelengths.

Abstract: A system and method for delivering multimedia content to computers over a computer network, such as the Internet, includes a novel media player which may be downloaded onto a user's personal computer. The media player includes a user interface which allows a listener to search an online database of media selections and build a custom playlist of exactly the music selections desired by the listener. The multimedia content delivery system delivers advertisements which remain visible on a user's computer display screen at all times when the application is open, for example, while music selections are being delivered to the user. The advertisements are displayed in a window which always remains on a topmost level of windows on the user's computer display screen, even if the user is executing one or more other programs with the computer.

Abstract: In a digital frequency phase locked loop (FPLL) for a grand alliance (GA) HDTV receiver using a vestigial sideband (VSB) modulation transmission system, the digital FPLL for a VSB transmission system having a VCO and a plurality of NTSC carrier eliminating filters for eliminating interference of NTSC adjacent channels includes a filter for eliminating high-frequency components by converting a digital signal output from one of the plurality of NTSC carrier eliminating filters, a delay for delaying the high-frequency-component-eliminated signal by a predetermined width so that its frequency-versus-phase characteristics are changed linearly, symbol inverter for inverting the symbol of the digital signal output from another of the plurality of NTSC-carrier eliminating filters, a switch for selectively outputting the symbol-inverted signal and the digital signal output from another filter, a second filter for limiting the selectively output signal to a predetermined frequency band, a digital-to-analog (D/A) conver

Abstract: A thin film transistor (TFT) matrix substrate has a testing circuit that can accurately detect the breaks in gate lines and data lines. In a substrate, TFTs are provided to be connected at the intersections of the gate lines and the data lines. A first shorting bar is commonly connected to the gate lines and a second shorting bar is commonly connected to the data lines. A first test pad receives a first test signal to be applied to the first shorting bar and a second test pad receives a first test signal to be applied to the second shorting bar. A third shorting bar is commonly connected to static electricity preventing devices installed at the gate lines and a fourth shorting bar is commonly connected to static electricity preventing devices installed at the data lines. A third test pad allows the second test signal to be applied to the third and fourth shorting during driving testing if the gate lines and the data lines have breaks or damaged.

Abstract: A TFT type optical detecting sensor includes a sensor TFT for generating optical current by detecting light reflected from an object, a storage capacitor for storing charges of the optical current, and a switching TFT for controlling releasing of the charges stored in the storage capacitor. The storage capacitor is made of a transparent conductive material, such that light is transmitted from a light source through the storage capacitor to the object.

Abstract: A sensor TFT includes a substrate, a gate electrode formed on the substrate, a semiconductor layer patterned on the insulating layer to generate an optical current using received light, source and drain electrodes formed on the semiconductor layer, the source and drain electrodes being spaced apart from each other, and a conductive channel defined by an area between the source and drain electrodes, wherein the conductive channel is not rectangular-shaped, such that the channel width is increased for a fixed channel length.

Abstract: A method for crystallizing an amorphous silicon layer and for fabricating a thin film transistor. An amorphous silicon layer is formed on a substrate, and patterned to form an active layer by etching the amorphous silicon layer using photolithography. The amorphous silicon layer is crystallized using sequential lateral solidification to form a crystallized active layer having a smooth surface. A smooth surface is obtained by the crystallization process without a subsequent smoothing step by canceling an increased volume of silicon during crystallization for an increased surface of the active silicon layer. The crystallized silicon layer is used to form a thin film transistor by forming a gate insulating layer and a gate electrode on the crystallized active layer, and forming a source and a drain region by doping the crystallized active layer with impurities in use of the gate electrode as a mask.

Abstract: The present invention relates to a thin film transistor and a fabricating method thereof wherein a source/drain region and a gate electrode are formed in the same layer, which improves the degree of planarization. Because source/drain electrodes and a gate electrode are formed by patterning the same layer with a single mask, the invention reduces the number of fabrication steps. The TFT includes an insulated substrate which is transparent, a source electrode and a drain electrode on the insulated substrate. The source and drain electrodes are separated from each other, and a gate electrode is between the source and drain electrodes on the insulated substrate. A gate insulating layer covers the source and drain electrodes and the gate electrodes on the gate insulating layer. An active layer is then formed on the gate insulating layer. Source and drain regions are formed at each end of the active layer corresponding to the gate electrode and a channel region is formed between the source and drain regions.

Abstract: The present invention provides data transmission control system in Set Top Box STB capable of matching output timings of a video or audio signal and a synchronous signal of the video or audio signal by controlling the transmission of the data bitstreams when transmission paths of video data or audio data and the synchronous signal of the video or audio data, are different from each other. Therefore, it is capable of solving the problems generated by asynchronization of a presentation signal. The present invention provides the video data transmission control system in Set Top Box(STB), comprising a bitstream control means in a data transmission path for matching timings of the bitstream ES(Elementary Stream) and a Presentation Time Stamps(PTS), in which the PTS and data ES are selected from compressed data ES respectively, which are transmitted for dynamic image presentation, decoding the ESs according to the PTS, and applying the decoded ES to an output device on the data transmission path.

Abstract: An apparatus for etching a glass substrate is disclosed which comprises a container 1; a porous plate 4 being set in the container 1 and having a plurality of holes 30; and a bubbling plate 3 being under the porous plate 4 and providing bubbles to the porous plate 4. The glass substrate 11 is uniformly etched because the liquid etchant is provided uniformly to the surface of the glass substrate 11 through the holes 30 of the porous plate 4. Further, the impurities on the surface of the glass substrate 11 is easily removed by the bubbles generated by the bubbling plate 3.

Abstract: A method is disclosed for controlling a pretilt angle direction for a liquid crystal cell comprising the steps of first setting the magnitude of pretilt angle and a plurality of pretilt angle directions in an alignment layer. This first step is achieved by irradiating linearly the alignment layer with polarized or unpolarized UV light. One of the plurality of pretilt angle directions is then selected by exposing the alignment layer to UV light a second time.

Abstract: The present invention relates to a method of fabricating a thin film transistor in which a metal silicide line generated from Metal Induced Lateral Crystallization is located at the outside of a channel region. The present invention includes the steps of forming a semiconductor layer on a substrate wherein the semiconductor layer has a first region, a channel region and a second region in order, forming a gate insulating layer/a gate electrode on the channel region, doping the first and the second region heavily with impurity, forming a metal film pattern making the first region a metal-offset, and crystallizing the semiconductor layer by means of applying thermal treatment to the semiconductor layer having the metal film.

Abstract: The plasma torch has a cathode supporter having a front end and a rear end, mounted on the body at the rear end thereof; a button-cathode for generating plasma arc, which is assembled to the front end of the cathode supporter; a hollow-cathode having an inner surface and an outer surface, surrounding the button-cathode, the inner surface of which is spaced from the button-cathode, being assembled to the cathode supporter, and being made of material with higher work function than material for the button-cathode. The plasma gas flows along the outer surface to accomplish low gas pressure between the inner surface of the hollow-cathode and the button-cathode. A multiple-solenoid coil is adapted to rotate arc root around the button-cathode and to move arc root axially along the surface of the button-cathode.

Abstract: The present invention relates to a thin film transistor (TFT), liquid crystal display (LCD) and fabricating methods thereof, and more particularly to a TFT having source/drain lines on which an insulating layer and an active layer are located lie on an insulated substrate, to an LCD using the TFT and fabricating methods of the TFT and LCD. The TFT has a BBC (Buried Bus Coplanar) structure by forming a source/drain line on a substrate and by forming a buffer layer which covers the source/drain line which simplifies the process by means of reducing the number of deposition steps. The BBC structure of TFT has a source/drain line on a substrate, an insulating layer covering the source/drain line and the entire disclosed surface and a coplanar structure on the insulating layer. The present invention also provides a data line in the TFT of the BBC structure having low resistance applicable to a wide-screen by means of forming both the buffer layer and the source/drain line with a sufficient thickness.

Abstract: A method of fabricating a thin film transistor having a vertical offset layer which prevents the damage on an active layer due to the etching plasma by preserving the vertical offset layer during an etching process for separating an ohmic contact layer.

Abstract: In a method of fabricating a substrate, a substrate is submerged into a chemical bath so that the thickness of the substrate changes. The temperature of the chemical bath is monitored to ascertain a change in the thickness of the substrate.

Abstract: A method of crystallizing an amorphous silicon layer to form a polycrystalline silicon layer having uniform and large grain sizes using an improved laser beam profile despite a reduced overlapping ratio. The polycrystalline layer is formed by melting the amorphous silicon layer completely, forming a polycrystalline silicon layer having fine grains by crystallizing the melted silicon layer, re-melting the fine grains in the polycrystalline silicon layer except a portion of the layer at a lower interface thereof, and re-crystallizing the silicon layer including the unmelted portion.