Abstract: Disclosed is a method for simply fabricating plural surface acoustic wave filter chip packages in large quantities comprising the steps of providing a wafer, on the surface of which plural surface acoustic wave filter chips are formed, and a package substrate, on the surface of which mounting portions corresponding to surface acoustic wave filter chips are formed; providing underfill on the package substrate; mounting the wafer on the package substrate; removing wafer portions between surface acoustic wave filter chips; forming metal shield layers on outer walls of separated surface acoustic wave filter chips; molding a resin on outer walls of surface acoustic wave filter chips coated with metal layers; and dividing the package substrate molded with resin into individual surface acoustic wave filter chip packages.

Abstract: A static electricity removal apparatus capable of raising an alternating rate at which ions are generated according to the speed of an object requiring static electricity removal using a high-frequency high voltage AC voltage includes: at least one discharge electrode assembly having a plurality of needle-shaped electrodes aligned with each other, each needle-shaped electrode receiving the high-frequency high voltage AC voltage and generating ions using a corona discharge; a ground electrode for facilitating ion generation by the plurality of needle-shaped electrodes; a high-frequency high voltage generation unit connected to the at least one discharge electrode assembly, the voltage generation unit generating the high-frequency high voltage AC voltage outputted to the plurality of needle-shaped electrodes; and an ion blower adapted to blow ions from the plurality of needle-shaped electrodes to the object requiring static electricity removal.

Abstract: Disclosed is a method for fabricating a plate-type magnetic resistance sensor chip simply and easily. First, a characteristic membrane composed of NiCo and NiFe is deposited over a surface of a glass wafer, exposed to light, and etched in a predetermined pattern to establish sensing parts. Then, a protective film is formed atop each of the sensing parts by depositing a SiO2 membrane over the glass wafer, exposing the SiO2 membrane to light, and etching the SiO2 membrane in the same pattern as in the sensing part. The resulting structure is subjected to sand blasting to form through-holes at every corner of the sensing parts. A NiFe film is deposited around the through-holes on both sides of the glass wafer and within the through-holes to form conductors.