Abstract: An improved vertical gradient freeze and vertical Bridgman compound semiconductor crystal growth apparatus capable of applying an axial magnetic field of about 1600G in the crystal growth axis direction using an electrical resistance type electromagnet which has a simple structure and can be installed easily, which includes a high temperature electric furnace arranged at an upper portion of the apparatus, a crystal growth reaction tube disposed within a low temperature electric furnace arranged below the high temperature electric furnace and having a reaction container disposed therein, and an electromagnet surrounding the intermediate portion of the high temperature electric furnace.

Abstract: A power screw driver includes a clutch mechanism composed of a coiled clutch spring so designed as to entangle a drive shaft member and an output shaft member to connect them together, thereby enabling the drive and output shaft members to rotate in unison. By the use of the coiled clutch spring, the clutch engaging operation is achieved smoothly and silently without accompanying impact blow or shock, thereby securing reliable transmission of a torque from the drive shaft member to the output shaft member. The coiled clutch spring may be activated only when the drive shaft member is rotating in the forward direction, in which instance a one-way clutch is used to undertake transmission of the torque when the drive shaft member is rotating in the reverse direction. As an alternative, a single clutch spring may be used to undertake transmission of the torque in the forward and reverse rotational directions. Alternatively, two coiled clutch springs each provided for one rotational direction may be used.

Abstract: A laser energy excitation and delivery device which includes a coaxial system of tubes having an annular space therebetween. A lasing or pumping gas is provided in the annular space and subjected to radio frequency discharge which results in the generation of laser radiation. The resulting laser radiation is propagated through and delivered from a section of the device which includes an extension of the innermost tube or an extension of each of the tubes. One embodiment of the device includes a central passageway though which various materials, including a guide wire, can pass. The device has particular utility for medical and surgical procedures.

Abstract: A method for enhancing the sensitivity of gradient-recalled echo imaging for T2* effects in dynamic magnetic resonance imaging which involves the step of delaying gradient-recalled echoes so that the gradient-recalled echoes are subjected to magnetic susceptibility effects for an extended period of time. The gradient-recalled echoes are delayed beyond a subsequent radio frequency pulse by applying an additional gradient which dephases any gradient-recalled echo of spins that are excited in the radio frequency repetition time period in which said gradient-recalled echoes are produced.

Abstract: A dynamic random access memory, which includes a data input buffer, a data input latch circuit, a data output buffer, and a switching circuit. For example, in an operation in a read-write cycle, at first, a data signal to be written is stored in the latch circuit 7 concurrent with inputting of an address signal in response to a signal WE. A data signal read from a memory cell is output via the output buffer in response to a signal OE. The switching circuit is turned on, and the data signal which has been latched is provided to the memory cell via a pair of I/O lines. As a result, the time required for the operation in the read-write cycle is shortened.

Abstract: A semiconductor dynamic random access memory is provided comprising bit line pairs divided into groups and sense amplifiers, one for each bit line pair group provided on one side of the bit line pairs in a line. When a word line is selected, only one bit line pair is released from a precharge.equalize state to be connected to a corresponding sense amplifier in each bit line pair group in accordance with address information of the word line. Memory cells are arranged such that only one memory cell is connected to the selected word line in each bit line pair group.

Abstract: Memory transistors are arranged in a plurality of rows and a plurality of columns. A source line is formed for every two bit lines formed in the column direction, each connected to the memory transistors of one column. A source region of each memory transistor is connected, on one side, to a source line adjacent thereto and, on the other side, to a source line through the source region of the adjacent memory transistor, through impurity regions respectively. A floating gate is formed to extend to a position under the corresponding source line. In another example, a source line is formed for each bit line formed in the column direction. The source region of each memory transistor is connected to the adjacent source lines on both sides thereof through impurity regions. The floating gate is formed to extend to positions under both adjacent source lines.

Abstract: A conventional closure or cap for a tablet-container is formed to have a recess of predetermined depth and shape to loosely receive therein a tablet preferably provided on at least one side with a stress-raising notch or score mark, so that the application of a lateral force on an upper portion of the tablet by a finger or thumb of the user will cause the tablet to break approximately along a plane extending across the tablet from the bottom of the stress-raising notch. In another aspect of the invention, the tablet preferably provided on at least one side with a stress-raising notch or score mark is laid with the notch downward into a recess provided with a partial movable base so that the application of force on the exposed surface of the tablet by a finger or thumb of the user causes the tablet to be supported close to its ends to thereby experience a break at the notch.