Abstract: The invention disclosed herein relates to a body of substantially pure isotropic boron nitride in which individual anisotropic crystals of boron nitride are substantially randomly oriented and pyrolytically bonded to form a body having substantially improved electrical and mechanical properties compared with anisotropic boron nitride bodies in which individual boron nitride crystals are hot press bonded.

Abstract: A process of forming a composite semiconductor integrated circuit by forming one or more epitaxial layers of semiconductor material on a semiconductor substrate, forming pedestals by etching partially through said epitaxial layers to form regions projecting from said substrate and etching through said epitaxial layers to form stress relieving channels in the substrate surrounding the pedestals. A thick layer of easily removable material such as an evaporated layer of chromium plus gold and a plated layer of gold is deposited of sufficient thickness to provide good mechanical support, and the substrate is removed by lapping, grinding or etching until at least the stress relieving channels are exposed thereby forming separate semiconductor elements containing said epitaxial regions.

Abstract: A high voltage power supply system particularly adapted for rapid switching of high voltage applied to an anode of a beam penetration color cathode-ray tube. Energy for making the rapid transition between voltage levels is stored in two energy storage inductors, one for upward transitions and the other for downward transitions. When it is desired to change the voltage applied to the cathode-ray tube, the appropriate one of the storage inductors is coupled through a controlled switch to the anode causing the voltage applied to the anode to change at a rapid rate. The voltage rises until the desired voltage level corresponding to a desired output color is reached at which time the switch is turned off and the storage inductor recharged. A tracking high voltage supply maintains the anode at the predetermined voltage level once that level has been reached.

Abstract: A variable range marker device for use with a PPI radar with digitized video displayed in non-real time. The position of the range marker is initially operator determined by rotation of a knob mechanically linked to an optically encoded disc. Optical sensors produce a digital output indicative of the disc rotation angle and range mark position as a distance from the center of the radar display screen. A counter is preset with the digital output at the start of each sweep and decremented once each range cell until a count of zero is reached at which time an unblanking pulse is produced. A numeric display of range is produced by dividing the number of range cells to the range mark by the range setting and displaying the result with a three digit LED display.

Abstract: A method of storing electric charges in a metal-nitride-oxide-semiconductor memory element by setting the threshold voltage of the element at any of a substantial number of voltages by applying both a DC voltage corresponding to the analog voltage to be stored and an AC voltage which is gradually reduced.

Abstract: A novel anode structure for electron discharge devices, for example, a crossed field oscillator of the magnetron type is fabricated by uniting nonthermally substantially similar cylindrical members each having a boundary wall member and plurality of vane members. The vane member edges are provided with alternate clearance or contacting mating notches to position an annular strap or straps in the complete anode assembly. Less expensive metal castings, such as aluminum, and other suitable vacuum materials, and such techniques as pressure welding and interference fits may be employed without expensive brazing procedures to result in a simplified less expensive anode structure. Different anode vane configurations are simply implemented, such as V-shapes, utilizing castings or similar structures which when joined together form the composite anode assembly.

Abstract: An energy seal for microwave oven apparatus having a first energy responsive structure disposed adjacent to a first energy propagation path commencing at the peripheral gap between the oven access opening and door assembly walls. A second structure responsive to the oven operating frequency is disposed adjacent to the output end of a second energy propagation path communicating with said first path. In one embodiment a conductive frame trim member forms a second choke-type structure together with underlying door assembly components of a nonconductive plastic material. The energy seal structures may also incorporate a slotted wall arrangement of the type disclosed in U.S. Pat. No. 3,767,884 to Osepchuk et al, issued Oct. 23, 1973.

Abstract: A plasma panel display device wherein a plasma forming gas is encapsulated in clear glass spheres which are sandwiched between two glass or plastic panels having transparent electrodes thereon. In some embodiments, the type of gas filling some of the spheres is varied to provide a multicolor display panel. A method for filling the small glass spheres with the preferred gas is also described.

Abstract: A process of forming a composite semiconductor integrated circuit by forming one or more epitaxial layers of semiconductor material on a semiconductor substrate, forming pedestals by etching partially through said epitaxial layers to form regions projecting from said substrate and etching through said epitaxial layers to form stress relieving channels in the substrate surrounding the pedestals. A thick layer of easily removable material such as an evaporated layer of chromium plus gold and a plated layer of gold is deposited of sufficient thickness to provide good mechanical support, and the substrate is removed by lapping, grinding or etching until at least the stress relieving channels are exposed thereby forming separate semiconductor elements containing said epitaxial regions.

Abstract: A microwave semiconductor amplifier or oscillator system in which a semiconductor device has an avalanching region at a junction and a heat sink having a higher thermal conductivity than said avalanching region in close thermal contact with the said junction. The avalanching region has a width substantially less than ten times the thickness of said avalanching region but a length substantially greater than said width. The heat sink is made substantially wider than that of the avalanching region so that heat generated in the avalanching region during operation of the system and moving into the heat sink will have a substantial component thereof moving parallel to the junction, thereby decreasing the thermal resistance between the heat source and the heat sink and hence permitting an increased power output from the system.

Abstract: A fusing technique whereby a fuse is fabricated upon a substrate by integrated circuit techniques. Three or more layers of chemically dissimilar metals are depositedupon the region where the fuse is to be formed. The top layers are then etched away from the region where the fusible link is to be formed leaving the lower two layers, the top one of which forms the actual fusible link. The lower layer is then etched away leaving the fusible link suspended from the underlying substrate. The current necessary to cause such a fuse to blow is consistent from fuse to fuse since the physical dimensions of the fusible link can accurately be controlled with the integrated circuit techniques used and, since the fusible link is not in contact with the substrate, the rate at which heat is conducted away from the fusible link cannot vary from fuse to fuse.

Abstract: A differentially adaptive receiver system in which correction is provided for degradation of performance caused by overlapping of adjacent data pulses. A reference signal is produced having the same complex envelope as the received signals and having a constant phase state independent of changes of phase state of the received signals. The received signals are detected against the reference signal as in an ideal matched filter receiver. The detected signals are integrated by an integrate and dump filter over the duration of the pulse period. A correction signal representing the amount of overlap between overlapping adjacent pulses is summed with the output of the integrated dump filter. The sum of the correction signal and integrate and dump filter output is sampled and held by sample and hold circuit to produce the digital data output.