Abstract: An incident radiation sensing apparatus comprises an array of photosensitive elements formed as an integrated circuit on a substrate. Each of the photosensitive elements includes a capacitor for storing charge, a conductive means for charging the capacitor to a preselected magnitude, a blocking means for inhibiting the discharge of charge stored on the capacitor; and a photoresponsive means formed from deposited semiconductor material for generating charge carriers at a rate responsive to the intensity of radiation incident upon the photoresponsive means. The photoresponsive means is connected to the capacitor so that the charge carriers generated in the photoresponsive means reduce the magnitude of the charge on the capacitor as a function of the magnitude of, and the time incidence of, the incident radiation.

Abstract: There is disclosed integrated circuit compatible thin film field effect transistors which can be fabricated at low temperatures and operated at fast switching rates for use, for example, in video rate applications. The transistors include a silicon-germanium alloy body having a structure more ordered than amorphous material and less ordered than single crystalline material. The source and drain of the transistors are rectifying contacts formed on or in the body. Also disclosed are a method of making the transistors and an electronically addressable array system utilizing the transistors to advantage.

Abstract: An apparatus for providing electrical signals representative of an image formed by X-rays projected thereon includes a two-dimensional array of spaced apart light sensitive sensors formed from deposited semiconductor material. The elements are capable of effecting a detectable electrical characteristic responsive to the intensity of light received thereon. A phosphorescent layer overlying the light sensitive elements receives the projected X-ray image and produces light in response to the impingement of the X-rays thereon. Isolation elements enable the selective addressing of the light sensitive elements. A method of converting an image from electromagnetic energy to a plurality of electrical signals is also disclosed.

Abstract: There is disclosed a film field effect transistor which can be operated at fast switching rates for use, for example, in video display applications. The transistor includes a body of silicon semiconductor material having a structure more ordered than amorphous material and less ordered than single crystalline material. The source and drain of the transistor comprise rectifying contacts formed on the body of silicon semiconductor material. Also disclosed are a method of making the transistor and an electronically addressable array system utilizing the transistor to advantage.

Abstract: An apparatus and method for exposing a film of radiation sensitive material overlying a substrate to a pattern of radiation utilizes proximity focusing of a mask pattern onto the film and step and repeat techniques for exposing the entire area of the film to be exposed. The apparatus includes a source of radiation, a substrate holder supporting the substrate with the film of radiation sensitive material thereon in the path of the radiation, and a mask holder for supporting the mask intermediate the radiation source and the film in close proximity thereto for proximity focusing the mask pattern onto the film. A stepping means incrementally moves the mask relative to the substrate to permit exposure of the film area.

Abstract: There is disclosed integrated circuit compatible thin film field effect transistors which can be fabricated at low temperatures and operated at fast switching rates for use, for example, in video rate applications. The transistors include a body of germanium semiconductor material having a structure more ordered than amorphous material and less ordered than single crystalline material. The source and drain of the transistors comprises rectifying contacts formed on or in the body of germanium semiconductor material. Also disclosed are a method of making the transistors and an electronically addressable array system utilizing the transistors to advantage.

Abstract: Disclosed herein is a method of writing data into, reading data out of, and/or removing data from a state changeable chalcogen medium. According to the disclosed invention projected beam energy is applied to the medium to change a discrete portion of the medium from a solid state of first relative order to a solid state of second relative order through an intermediate state of relatively high mobility. The invention disclosed herein further contemplates applying projected beam energy to the medium to change the discrete portion of the medium from the state of second relative order through a relatively high mobility intermediate state back to the state of first relative order. In this way the written carrier to noise ratio is relatively high, the erased carrier to noise ratio is relatively low, and the carrier to noise ratios and contrast ratio are maintained relatively constant substantially independent of the cycle numbers.