Patents Represented by Attorney MacPherson Chen & Heid LLP

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  • High pressure treatment for improved grain growth and void reduction
    Patent number: 7344979
    Abstract: A copper film is annealed at high pressure to enhance grain growth and remove voids. Other films, such as dielectrics, may also be suitable. High pressure can be used in conjunction with temperatures lower than room temperature for annealing or higher temperatures may be used to further enhance grain growth.
    Type: Grant
    Filed: February 11, 2005
    Date of Patent: March 18, 2008
    Assignee: WaferMasters, Inc.
    Inventors: Woo Sik Yoo, Kitaek Kang