Abstract: A method of synthesizing an aminosilane source reagent composition, by reacting an aminosilane precursor compound with an amine source reagent compound in a solvent medium comprising at least one activating solvent component, to yield an aminosilane source reagent composition having less than 1000 ppm halogen.

Abstract: Drying of patterned wafers is achieved in a manner effecting removal of water from the patterned wafers without collapse or deterioration of the pattern structures thereof. The drying is carried out in one aspect of the invention with a composition containing supercritical fluid, and at least one water-reactive agent that chemically reacts with water to form reaction product(s) more soluble in the supercritical fluid than water. Various methodologies are described for use of supercritical fluids to dry patterned wafers, which avoid the (low water solubility) deficiency of supercritical fluids such as supercritical CO2.

Abstract: A CVD Method of forming gate dielectric thin films on a substrate using metalloamide compounds of the formula M(NR1R2)x, wherein M is selected from the group consisting of: Zr, Hf, Y, La, Lanthanide series elements, Ta, Ti, Al; N is nitrogen; each of R1 and R2 is same or different and is independently selected from the group consisting of H, aryl, perfluoroaryl, C1–C8 alkyl, C1–C8 perfluoroalkyl, alkylsilyl and x is the oxidation state on metal M; and an aminosilane compound of the formula HxSi(NR1R2)4-x, wherein H is hydrogen; x is from 0 to 3; Si is silicon; N is nitrogen; each of R1 and R2 is same or different and is independently selected from the group consisting of H, aryl, perfluoroaryl, C1–C8 alkyl, and C1–C8 perfluoroalkyl. By comparison with the standard SiO2 gate dielectric materials, these gate dielectric materials provide low levels of carbon and halide impurity.

Abstract: A gas supply system arranged for dispensing of gas at a predetermined flow rate. The system employs a gas dispensing flow circuitry arranged for dispensing gas at selectively variable gas flow conductance conditions, to maintain the flow rate of the dispensed gas at a predetermined, e.g., constant, value in the operation of the system. The gas dispensing flow circuitry may include an array of dispensed gas flow passages, each of a differing conductance, or alternatively a variable conductance gas flow passage equipped with a variable conductance assembly for modulating the gas flow conductance of the passage, in response to sensed pressure of the gas or other system parameter. The system permits the flow rate of a dispensed gas to be maintained at a consistent desired level, despite the progressive decline in source gas pressure as the gas source vessel is depleted in use.