Abstract: In a method of contacting terminals, a substrate having a first terminal and a second terminal is provided, a terminal surface of the first terminal being located at a shorter distance from a substrate surface than a surface of the second terminal. A first insulating layer, in which a contact via is formed for exposing the terminal surface of the first terminal, is formed on the substrate surface. The contact via is filled with a conductive material, and a second insulating layer is formed on the first insulating layer and on the contact via filled with the conductive material. Using an etching mask, a first recess for exposing the conductive material filling the contact via, and a second recess are etched through the second and first insulating layers for exposing the second terminal surface. A conductive material for producing first and second contact terminals is introduced into the first and second recesses.