Abstract: A process for forming a silicon-germanium base of a heterojunction bipolar transistor. First, a silicon substrate having a mesa surrounded by a trench is formed. Next, a silicon-germanium layer is deposited on the substrate and the portion of the silicon-geranium layer adjacent the mesa is removed to form the silicon-germanium base. In a second embodiment, the process comprises the steps of forming a silicon substrate having a mesa surrounded by a trench, forming a dielectric layer in the trench adjacent the mesa, and growing a silicon-germanium layer on the mesa top surface using selective epitaxial growth to form the silicon-germanium base.

Abstract: A method for minimizing formation of cracks at junctions between conductive vias and conductive lines in line-to-via connections on a substrate. The method comprises providing a transition zone connected between a base section of the line and a cap, the transition zone providing a volume of conductive paste during a conductive paste screen printing operation that is greater than the volume provided by the base section being directly connected to the cap. In particular, the transition zone volume is an effective amount to prevent necking of the conductive line into the via when the mask is misaligned to the substrate within an expected alignment tolerance. The transition zone may comprise a jogged end extending from the base section to the cap at an angle to the line, or a flared end extending from the base section. Line-to-via connection structures, patterns on a mask for making such structures, and masks having such patterns are also disclosed.