Abstract: Disclosed is an image display device to secure uniformity of a screen without luminance unevenness by reducing the number of signal lines and enhancing accuracy in voltages to be applied to respective pixels. In an interval after a scan line Gn+2 is set to selection potential until the scan line Gn+2 is set to non-selection potential, a first display signal having first electric potential to be given to a pixel electrode A is supplied to a signal line, whereby the pixel electrode A and a pixel electrode B are provided with the first electric potential. In addition, after the scan line Gn+2 is set to the non-selection potential, a second display signal having second electric potential to be given to the pixel electrode B is supplied to the signal line, whereby the pixel electrode B is provided with the second electric potential.

Abstract: The present invention relates generally to a new dielectric forming metal/ceramic laminate magnet and process thereof. More particularly, the invention encompasses a new process for fabrication of a large area laminate magnet with a significant number of holes, integrated dielectric forming metal plate(s) and electrodes for electron and electron beam control. The present invention also relates to a magnetic matrix display and electron beam source and methods of manufacture thereof.

Abstract: An advanced back-end-of-line (BEOL) metallization structure is disclosed. The structure includes a bilayer diffusion barrier or cap, where the first cap layer is formed of a dielectric material preferably deposited by a high density plasma chemical vapor deposition (HDP CVD) process, and the second cap layer is formed of a dielectric material preferably deposited by a plasma-enhanced chemical vapor deposition (PE CVD) process. A method for forming the BEOL metallization structure is also disclosed. The invention is particularly useful in interconnect structure comprising low-k dielectric material for the inter-layer dielectric (ILD) and copper for the conductors.

Abstract: A method is disclosed for forming a semiconductor wafer having a strained Si or SiGe layer on an insulator layer. The method produces a structure having a SiGe buffer layer between the insulator layer and the strained Si or SiGe layer, but eliminates the need for Si epitaxy after bonding. The method also eliminates interfacial contamination between strained Si and SiGe buffer layer, and allows the formation of Si/SiGe layers having a total thickness exceeding the critical thickness of the strained Si layer.

Abstract: A method for forming a gate dielectric for an integrated circuit device. In an exemplary embodiment of the invention, the method includes forming an initial oxynitride layer upon a substrate material, the oxynitride layer having an initial physical thickness. The initial oxynitride layer is then subjected to a plasma nitridation, the plasma nitridation resulting in final oxynitride layer having a final physical thickness.

Abstract: An advanced back-end-of-line (BEOL) metallization structure is disclosed. The structure includes a bilayer diffusion barrier or cap, where the first cap layer is formed of a dielectric material preferably deposited by a high density plasma chemical vapor deposition (HDP CVD) process, and the second cap layer is formed of a dielectric material preferably deposited by a plasma-enhanced chemical vapor deposition (PE CVD) process. A method for forming the BEOL metallization structure is also disclosed. The invention is particularly useful in interconnect structures comprising low-k dielectric material for the inter-layer dielectric (ILD) and copper for the conductors.

Abstract: It is one object of the present invention to provide an FPGA for which the configuration time and the time required for rewriting connection information and logic structure information can be reduced, and for which the size of the area occupied can also be reduced. In order to store connection information for an FPGA, magnetic storage elements MTJ1 to MTJn, which are memory cells of an MRAM, are provided, and using a shift register 71, connection information is written to the magnetic storage elements MTJ1 to MTJn. The shift register 71 includes register elements SR1 to SRn, which correspond to the magnetic storage elements MTJ1 to MTJn, to which the connection information is serially input and stored. When the power is switched on, the connection information stored in the magnetic storage elements MTJ1 to MTJn is latched by latch elements LT1 to LTn, and is output to switching circuits 6 to interconnect logic blocks 51.

Abstract: The object of this invention is to provide a timing circuit that can change a clock period with low power consumption. The timing circuit includes a clock generator 11, comparators 12 and 13 for comparing an inputted control voltage TDV and reference voltages VR, respectively, retaining circuits 18 and 19 for retaining outputs of the comparators, respectively, and circuits 20, 21 and 22 for producing timing pulses TDT as an output thereof based on outputs of the retaining circuits and clock signals outputted from the clock generator. Each comparator receives a first clock signal SS outputted from the clock generator and is operated only for a time corresponding to a short pulse width of the first clock signal SS.

Abstract: An object of the present invention is to provide a memory cell, a memory circuit block, a data writing method, and a data reading method which realize a reduction in the number of metal layers, cost, and the chip size and an increase of production yields and product reliability. A memory cell 12 including a metal line 16 crossing a bit line 14 without contact therewith and a second conductive structure 24 connecting the metal line 16 and a switching element 20 is disclosed. A write driver circuit 26 for driving a write current through the metal line 16 and a ground 28 are connected to the metal line 16 through a switch 30 for selecting the circuit 26 or the ground 28.

Abstract: A method for forming back-end-of-line (BEOL) interconnect structures in disclosed. The method and resulting structure includes etchback for low-k dielectric materials. Specifically, a low dielectric constant material is integrated into a dual or single damascene wiring structure which contains a dielectric material having relatively high dielectric constant (i.e., 4.0 or higher). The damascene structure comprises the higher dielectric constant material immediately adjacent to the metal interconnects, thus benefiting from the mechanical characteristics of these materials, while incorporating the lower dielectric constant material in other areas of the interconnect level.

Abstract: A method and structure for a CMOS device comprises depositing a silicon over insulator (SOI) wafer over a buried oxide (BOX) substrate, wherein the SOI wafer has a predetermined thickness; forming a gate dielectric over the SOI wafer; forming a shallow trench isolation (STI) region over the BOX substrate, wherein the STI region is configured to have a generally rounded corner; forming a gate structure over the gate dielectric; depositing an implant layer over the SOI wafer; performing one of N-type and P-type dopant implantations in the SOI wafer and the implant layer; and heating the device to form source and drain regions from the implant layer and the SOI wafer, wherein the source and drain regions have a thickness greater than the predetermined thickness of the SOI wafer, wherein the gate dielectric is positioned lower than the STI region.

Abstract: In an integrated circuit process for SOI including trench device isolation, the problem of voids in the trench fill is addressed by a triple fill process, in which a thermal oxide sidewall having recesses at the bottom corners is covered with a LPCVD deposition that fills in the recesses, followed by a void-free HDP deposition. Densification results in substantially the same etch rate for the three types of oxide.

Abstract: A method for sensing data stored within a cross point magnetic random access memory (MRAM) device includes establishing an offset voltage of a sense amplifier, the sense amplifier selectively coupled to a selected bitline within the MRAM device, the selected bitline being in communication with an MRAM cell to be read. A read current is applied through the MRAM cell to be read, and a reference current is applied through the selected bitline. A signal voltage is sensed on the selected bitline, the signal voltage being generated in response to the read current and the reference current. The signal voltage is coupled to an input of the sense amplifier, wherein the sense amplifier provides an offset corrected output reflective of the data state of the MRAM cell.

Abstract: A mesh-like reinforcing structure to inhibit delamination and cracking is fabricated in a multilayer semiconductor device using low-k dielectric materials and copper-based metallurgy. The mesh-like interconnection structure comprises conductive pads interconnected by conductive lines at each wiring level with each pad conductively connected to its adjacent pad at the next wiring level by a plurality of conductive vias. The conductive pads, lines and vias are fabricated during the normal BEOL wiring level integration process. The reinforcing structure provides both vertical and horizontal reinforcement and may be fabricated on the periphery of the active device region or within open regions of the device that are susceptible to delamination and cracking.

Abstract: The capacitance of deep trench capacitors is enhanced by increasing the surface area of the doped region of the trench to be used for one electrode of the capacitor. After formation of the deep trench and a collar on an upper region of the trench, and after optional bottling of the trench, hemispherical silicon grain (HSG) is deposited on a lower region of the trench. The HSG is then oxidized, along with that portion of the silicon substrate not covered by HSG, to form a roughened surface in the trench, thereby enhancing the trench capacitance. Oxidation of the HSG and the substrate occurs simultaneously with formation of the buried plate, and the formed oxide may be stripped along with the collar, thereby providing a simpler and more robust capacitance enhancement scheme.

Abstract: A method is provided for blocking implants from the gate electrode of an FET device. Form a first planarizing film covering the substrate and the gate electrode stack. The first planarizing film is planarized by either polishing or self-planarizing. For deposition by HDP or use of spin on materials, the film is self-planarizing. Where polishing is required, the first planarizing film is planarized by polishing until the top of the gate electrode is exposed. Etch back the gate electrode below the level of the upper surface of the first planarizing film. Then deposit a blanket layer of a second planarizing film and polish to planarize it to a level exposing the first planarizing film, forming the second planarizing film into an implantation block covering the top surface of the gate. Remove the first planarizing film. Form the counterdoped regions by implanting dopant into the substrate using the implantation block to block implantation of the dopant into the gate electrode.

Abstract: A method for forming a planarized field effect transistor (FET) is disclosed. In an exemplary embodiment of the invention, the method includes defining an active semiconductor region upon a substrate, the active semiconductor region further comprising a pair of mesa regions therein. A source region is defined within a top surface of one of the pair of mesa regions, and a drain region is defined within a top surface of the other of the pair of mesa regions. Then, a gate material is deposited between the pair of mesa regions, and the gate material is planarized to form a gate. Thereby, a top surface of the gate is substantially planar with the source and drain regions.

Abstract: A method for forming interconnect structures in a magnetic random access memory (MRAM) device includes defining an array of magnetic tunnel junction (MTJ) stacks over a lower metallization level. A encapsulating dielectric layer is formed over the array of MTJ stacks and the lower metallization level. Then, a via opening is defined in the encapsulating dielectric layer, and a planar interlevel dielectric (ILD) layer is deposited over the encapsulating dielectric layer and within the via opening. Openings are then formed within ILD layer, over the array of MTJ stacks and the via opening.

Abstract: A magnetic random access memory (MRAM) circuit block and access method thereof are disclosed herein which includes a circuit for sensing a data write current passing through a bitline 32 and, for generating a stop signal for stopping a data write current supply to the bitline 32 and a write wordline 30 after data is written in an magnetic tunnel junction (MTJ) element 44. Further, when data to be written to the storage element is the same as the data already stored therein, no write current is supplied to the write wordline 30, thereby saving power.

Abstract: There is disclosed a high throughput multideposition SACVD reactor that enables the rapid thermal deposition of dielectric materials such as Si3N4, SiO2, and SiON and non-dielectric materials such as polysilicon onto a semiconductor substrate in the same chamber according to the desired sequence. Such a reactor has a processing chamber which is well adapted to single semiconductor wafer processing. The processing chamber includes an improved susceptor to support the wafer and a specific gas distribution system adapted to supply the different gases used in the deposition process and for cleaning. The improved susceptor consists of a standard carbon plate coated with a polysilicon film to protect it against said cleaning gases when they are aggressive to carbon. The present invention also encompasses a method of fabricating said improved susceptor.