Abstract: Provided are a memory card and a method of fabricating the memory card. The memory card includes: a printed circuit board including conductive wires exposed to at least a portion of an outer wall of the printed circuit board; at least one electronic device mounted on the printed circuit board; and a molding part sealing the at least one electronic device on the printed circuit board and the conductive wires exposed to the outer wall of the printed circuit board, and simultaneously exposing at least a portion of the outer wall of the printed circuit board.

Abstract: A memory device utilizing a negatively biased word line scheme diverts word line discharge current from the negative voltage source during a precharge operation, thereby reducing voltage fluctuations and current consumption from the negative voltage source. A main word line, sub-word line, word line enable signal, or other type of word line is coupled to the negative voltage source during a precharge operation. The word line is also coupled to a second power supply during the precharge operation, and then uncoupled from the second power supply after most of the word line discharge current has been diverted. The negative voltage source can then discharge and maintain the word line at a negative bias.